> TED-2011-11-1221-R.R1< 4conventional lateral BJTs and further work needs to be done tooptimize the speed of BCPT.IV.
EFFECT OF INTERFACE TRAPS ON CURRENT GAIN
A key feature of the BCPT structure is the low work-function metal electrode employed at the emitter contactforming a metal-semiconductor junction (hafnium-silicon).Depending on the surface preparation and metal depositionmethods, there is a definite possibility of the presence of trapsat the hafnium-silicon interface due to lattice discontinuity andthe dangling bonds, not to mention inter-diffusion. These trapsare very likely to affect the electron distribution and theelectric field in this area, which in turn would affect theSALTran effect . Both the acceptor and the donor type of interface traps can affect the accumulation of electrons at theinterface and thus the current gain of the BCPT.To simulate the influence of interface traps on the devicecharacteristics, we have considered a typical range of interfacetraps which may be present at the interface. In our simulationsboth the acceptor and the donor type of traps are introducedwith the trap energy level (E.level) at 0.49 eV from theconduction (or valance) band . The degeneracy factor(degen) for the trap level is chosen to be 12 and the capturecross-sections for electrons (sign) and holes (sigp) are taken tobe 2.85×10
, respectively.Peak current gain reduces when the trap density of theacceptor (or donor) type of interface traps increases at theinterface as shown in Fig. 9 and the effect is even more severewhen both type of traps are present at the interface. This effectis also observed for a conventional SALTran BJT in .However, even with a trap density of 1×10
, BCPT stillmaintains a substantially high peak current gain as observed inFig. 9.V.
CONCLUSIONIn conclusion, we report the possibility of realizing a uniqueBipolar Charge Plasma Transistor (BCPT) made of electronand hole plasma on undoped silicon making it immune tothermal budget concerns faced by doped transistors andCMOS devices. The efficacy of the proposed concept isverified using two-dimensional numerical simulations. Oursimulation results demonstrate that the BCPT exhibits asignificantly large current gain compared to a conventionalBJT with doped regions of similar geometry. The BCPTconcept can also be applied for materials such as SiC in whichdoping is an issue or for hetero-junction bipolar transistors.This idea can be extended to an undoped silicon nanowirewith surround gate electrodes to induce the emitter, base andcollector regions making it compatible with the futurenanowire and FinFET based CMOS technology . Since thecharge plasma based diode concept has already beendemonstrated experimentally , we believe that our resultswill provide the incentive for further experimental verificationof the BCPT concept. However, it remains to be seen whetherthe fabrication of BCPT will be cost effective, since threedifferent metals are required for the emitter, base and collectorelectrodes. The device also needs to be optimized to match thespeed performance of the commercially available lateralbipolar transistor technology.R
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