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Highly insulating monocrystalline gallium nitride thin films (US patent 5686738)

Highly insulating monocrystalline gallium nitride thin films (US patent 5686738)

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Published by PriorSmart
U.S. patent 5686738: Highly insulating monocrystalline gallium nitride thin films. Granted to Moustakas on 1997-11-11 (filed 1995-01-13) and assigned to Trustees of Boston University. Currently involved in at least 2 patent litigations: Trustees of Boston University v. Everlight Electronics Co., Ltd. et. al. (Massachusetts);Trustees of Boston University v. Seoul Semiconductor Company, Ltd. et. al. (Massachusetts). See http://news.priorsmart.com for more info.
U.S. patent 5686738: Highly insulating monocrystalline gallium nitride thin films. Granted to Moustakas on 1997-11-11 (filed 1995-01-13) and assigned to Trustees of Boston University. Currently involved in at least 2 patent litigations: Trustees of Boston University v. Everlight Electronics Co., Ltd. et. al. (Massachusetts);Trustees of Boston University v. Seoul Semiconductor Company, Ltd. et. al. (Massachusetts). See http://news.priorsmart.com for more info.

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Published by: PriorSmart on Oct 17, 2012
Copyright:Public Domain

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09/22/2013

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