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CMOS Fabrication

CMOS Fabrication

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Published by Subir Maity

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Published by: Subir Maity on Feb 16, 2013
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07/29/2013

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Fabrication of CMOS
CMOS N-well process
 
CMOS n-well process
The n-well CMOS process starts with a
moderately doped
(impurity concentrationless than 10
15
cm
-3
)
p-type siliconsubstrate
.
Then, an
oxide layer is grown
on theentire surface. The first lithographic maskdefines the n-well region.
Donor atoms,usually phosphorus
, are implantedthrough this window in the oxide. Thisdefines, the active areas of the nMOS andpMOS transistors.
Thingate oxide is grown
on top of theactive regions. The thickness and thequality of the gate oxide are criticalfabrication parameters, since they affectthe characteristics of the MOS transistor,and its reliability.
 
CMOS n-well process
The
polysilicon layer isdeposited
using chemicalvapour deposition(CVD)andpatterned by dry(plasma)etching.
The created polysilicon lineswill function as the gateelectrodes of the nMOS andthe pMOS transistors andtheir interconnects.
Also, the polysilicon gates actasself-aligned masksfor thesource and drainimplantations that follow thisstep.

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