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DSE Seminario (2009-02-18) Examen EA Sept. 2007

DSE Seminario (2009-02-18) Examen EA Sept. 2007

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Published by: Oskar Casquero on Feb 24, 2009
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05/10/2014

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Diseinu eta Simulazio Elektronikoa1
SEMINARIO (2009/02/18) Examen EA Sept. 2007
Ondorengo zirkuituko transistore bakoitzaren lan puntua kalkulatu ezazu.T1 T4 T2 T3β = 100V
BE,ON
= V
BE,SAT
= 0.7vV
CE,SAT
= 0.2v|I
DS
| = 10mA|V
P
| = 6v|K| = 0.15mA/V2|V
T
| = 10vSOLUCIÓNT1 es un BJT de tipo NPN
21121 1,
017.064.0 64.05 515020
 I  I  I  I  I   I CORTADOvv v
ON  BE thth
=
+=
=
=<==+=
 
150k
5k
T13k
3k
T220k
1k
1.33M
T3500
T45k
3k
20 V-20 V
 
Diseinu eta Simulazio Elektronikoa2
v I 
GG
102200
22
==
=
 T2 es un JFET de canal nSuponemos T2 en SATURACIÓN
22222
1
    
=
GS  DS  D
 I  I 
 
( )
22222222
20300202010 02020?
 DGS  DGS  DGS GGS 
 I  I  I entradadeMalla
==+ =
 
( )
0360401111 2036361062030110
222222222
=+=
    
=
 D D D D D D
 I  I  I  I  I  I 
 
inicial hipótesislaConfirma SATURADOvmA I  inicial hipótesisla Niega CORTADOvmA I 
GS  DGS  D
=
=
=
=
24.367.1 26.893.1
2222
 
( )
v I  I  salidadeMalla
 DS  D DS  D DS 
9.467.12067.1140 02020120 ?
22222
== =
 Comprobamos que T2 está en saturación69.44.3
22
>+>+
 DS GS 
 
 
Diseinu eta Simulazio Elektronikoa367.1120120 3.180
22233
==
==
=
 D D DGS G
 I v I 
 T3 es un MOSFET de enriquecimiento de canal nSuponemos T3 en SATURACIÓN
( )( )
mA I  I  K  I 
 D DGS  D
4.10103.1815.0
32323333
===
 4??
3
 I  salidadeMalla
 DS 
 
43
B D
 I  I 
+=
 T4 es un BJT de tipo NPN
444
 B E 
 I  I 
+=
 Suponemos T4 en ACTIVA
( )
444444 ,44
1
B B B E  B ON  BE  BE 
 I  I  I  I  I  I 
+=+=
==
 β  β  β 
 
( ) ( )( ) ( )
mA I  I  A I   I  I  I  I  I   I  I adiscontinulíneaconindicadaMalla I  I 
 B B B B BON  BE  B D  E ON  BE  B
6.4046.010046 0100137.04.105.020 0135.020 035.020 ??
444444,443 4,444
===
==++ =++ =
 β  µ  β 
 

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