induction on arti®cial substrata bearing topographicalfeatures, some workers have suggested a role forchemical signalling in appressorium induction in
P. graminis tritici
and related cereal rusts. However, thesigni®cance of chemicals inducing rust appressoria undernatural conditions is not clear (Hoch and Staples 1991;Read et al. 1992). Nevertheless, there is evidence that thechemical environment associated with stomata mayprovide inductive stimuli for appressorium formation(Grambow and Reisener 1976
;
Grambow 1977, 1978;Grambow and Reidel 1977; Grambow and Grambow1978).In this study, we found that 91±99% of germ tubes of the cereal rusts
P. graminis tritici
(wheat stem rust) and
P. hordei
(barley brown rust) dierentiate appressoriaupon encountering host stomata. Using arti®cial micro-fabricated substrata we have shown, for the ®rst time,that a reproducibly high percentage (83±86%) of germtubes of these rusts can be induced to dierentiateappressoria in response to topographical signals alone.Germ tubes of these species dierentiated over closelyspaced, multiple ridges and grooves, but not to asigni®cant extent over single ridges. The inductivetopographies commonly initiated a cascade of dieren-tiation events which resulted in the successive formationof appressoria, infection pegs, vesicles, infection hyphaeand, very occasionally, haustorial mother cells. With theexception of appressoria, these infection structures areusually only formed inside the leaf. It is suggested thatthe inductive topographical signals in vivo are associatedwith the close spacing of cell junctions adjacent to thestomata of cereal leaves.
Materials and methods
Fungal and plant material.
The fungal material used was
Pucciniahordei
, race octal 1653 (obtained from the Welsh Plant BreedingStation, Aberystwyth, UK) and
P. graminis tritici
, isolate 84 fromthe National Institute for Agricultural Botany (Cambridge, UK).For experimentation, uredospores of
P. hordei
and
P. graministritici
were harvested from infected plants (Feekes growth stage 12,Tottman and Makepeace, 1979) of the susceptible barley (
Hordeumvulgare
L.) cultivar Golden Promise and susceptible spring wheat(
Triticum aestivum
L.) cultivar Armada, respectively.
Analysis of appressorium dierentiation in vivo.
Dierentiationin vivo was investigated on host leaf segments. Leaves of eachcereal were taken from four-week-old plants and 60-mm-longsections from each leaf excised. The leaves were inoculated with3 mg of fresh uredospores in a settling tower which was 23 cmdiameter and 76 cm high. The spores were blown from a rolledsheet of paper into a hole at the top of the settling tower using acompressed-air can (Kenro; H.A. West, Edinburgh, UK). Thespore density on the leaf surface was 100±150 spores
á
cm
)
2
. Theinoculated leaf segments were placed in Petri dishes, adaxial sideuppermost with their cut ends under wet ®lter paper, and incubatedat 22
°
C for 24 h. Percentage appressorium formation in vivo wasquanti®ed as the percentage of those germlings which hadencountered stomata and formed appressoria over those stomata.
Design and manufacture of microfabricated silicon wafers.
Preciselyde®ned microtopographies were etched in 76-mm-diameter siliconwafers by a process of reduction projection photolithography andreactive ion beam etching (Hoch et al. 1996).The X-Y dimensions of the microtopography in the silicon werede®ned as a `mask' in anti-re¯ective chromium on a 120-mm glassplate. The pattern of the mask was designed using CADENCECAD software. These data ware used by an electron beam patterngenerator to write the pattern onto a layer of electron beam resistcovering the chromium-coated plate (Compugraphics Internation-al, Glenrothes, UK). The pattern was written in the mask resistwith a 1-
l
m electron beam spot and developed using standard resistsolvents. The exposed chromium layer was then removed with ferricchloride and the remains of the resist removed with appropriatesolvents.The Z-dimension of the microtopography was de®ned by theprecise thickness of a layer of SiO
2
on the surface of the siliconwafer which was created by thermal oxidisation in steam (burningH
2
in O
2
at 950
°
C). The de®nition of the Z-dimension of themicrotopography relies on the fact that SiO
2
is preferentially etchedover the silicon (at a SiO
2
: silicon etch ratio of >12:1). Precisecontrol of the depth of the microtopography was achieved byetching the exposed SiO
2
completely. Wafers with topographies0.116 and 2.4
l
m deep had oxidisation times of 30 min and 48 h,respectively.Preparation of the wafers for de®nition of the X-Y dimensionsof the topographical pattern involved spin coating the oxidisedwafers with positive HIPR6512 photoresist (Microelectronic Ma-terials, Livingstone, UK). Adhesion of the resist to the wafer wasimproved by vacuum-baking the wafer in hexamethyldisilazeneprior to coating. The solvent in which the resist was dissolved wasthen removed by baking at 90
°
C on a hot plate.Using a Reduction Direct Step On wafer machine (EatonOptimetrix, Anheim, Calif. USA), a 10
´
reduced image of themask was printed onto the resist with 436-nm illumination from ashort-arc Hg lamp. The exposed resist was then removed bydeveloping it in dilute methyl ammonium hydroxide which reactswith the indene carboxylic acid created within the light-exposedregions of the photoresist. The X-Y dimensions result from etchingthe exposed SiO
2
only.The SiO
2
was etched at a rate of approximately 1
l
m
á
h
)
1
using radio-frequency plasma in a mixture of CHF
3
and He in aPK2440 reactor (Plasmatherm, Kresson, N. J., USA). Once all theexposed SiO
2
was etched, the remains of the photoresist wasremoved by low-pressure O
2
plasma and then immersion in fumingHNO
3
.The microfabricated silicon wafers used had 2.0-
l
m-widetroughs etched to depths of 0.116, 0.223, 0.55, 0.72, 1.20, 1.50,2.00 and 2.40
l
m. The spacings of these troughs were 1.5, 2.5 or50
l
m.
Preparation of polystyrene replicas of silicon wafers.
The microto-pographies used to analyse appressorium induction were negativereplicas of the microfabricated silicon wafers (Fig. 1).Wafer replicas were made by heat-pressing polystyrene onto themicrofabricated silicon wafer using a method adapted from thatdescribed by Hoch et al. (1996). For this purpose, 12 mm
´
12 mmpieces of Petri dish (Philip Harris, Clydebank, UK) were used. Twowafers were placed `microfabricated side' up on a glass microscopeslide (BlueStar; Chance Proper, Warley, UK) and each wafer had apiece of Petri dish placed on top of it followed by a secondmicroscope slide. Five microscope slides were sandwiched betweentwo ceramic kitchen tiles with a weight on top (totalweight
450 g) and then heated at 200
°
C for 50 min. Whilsthot, the wafers were separated from the polystyrene replicas byplunging into cool distilled water. Control substrata (¯at surfaces)were prepared in the same way except the silicon wafers were notincluded in the sandwich.Wafers were regularly cleaned by ®rst soaking them inchloroform for 4±5 h to remove pieces of polystyrene then washedbrie¯y in clean chloroform and allowed to dry, `microfabricatedside' up, on ®lter paper. The wafers were then left under a mixtureof 50 ml concentrated H
2
SO
4
and 25 ml of 30% H
2
O
2
overnightafter which the wafers were thoroughly washed in distilled waterbefore being dried, `microfabricated side' down, on ®lter paper.164 N.D. Read et al.: Topography sensing in cereal rusts
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