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Impatt Diode

Impatt Diode

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Published by Tuhin Dutta
It is a presentation on IMPATT Diode. I have tried to present the working of a IMPATT Diode.
It is a full presentation on IMPATT Diode at the intra college seminar level.
It is a presentation on IMPATT Diode. I have tried to present the working of a IMPATT Diode.
It is a full presentation on IMPATT Diode at the intra college seminar level.

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Published by: Tuhin Dutta on Mar 08, 2009
Copyright:Attribution Non-commercial

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06/24/2013

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IMPATT Diode
Name:- Tuhin DuttaStream:- ECERoll: 1011
 
 
Introduction
When the pn junction diode is reverse-biased, then current doesnot flow.
However when the reverse voltage exceeds a certain value, the junction breaks down and current flows with only slight increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche breakdown condition exhibitsnegative resistance characteristics in the microwave frequencyrange.
Since the negative resistance is based upon avalanchemultiplication and transit-time effect of carriers, the device has beencalled the IMPATT (Impact Avalanche Transit-Time) Diode.
 
 
Device Structure
The original suggestion for a microwave device employingtransit-time effect was made by W. T. Read andinvolved an
n+-p-i-p+
structure such as that shown infigure. This device operates by injecting carriers into thedrift region and is called an IMPATT diode.The device consists essentially of two regions:1) the
n+p
region, at which avalanchemultiplication occurs, and2) the
i
(essentially intrinsic) region, through whichgenerated holes must drift in moving to
 p+
contact.

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Sajjad Amiri added this note
excellent!!!!!
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Really Helpful presentation.
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wonerfull
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