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Electric circuits &Electronics device question paper

Electric circuits &Electronics device question paper

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Published by Salai Kishwar
Questions 10286
Questions 10286

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Published by: Salai Kishwar on Mar 30, 2013
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 ASK 
Question Paper Code : 10286
B.E. /B. Tech. DEGREE EXAMINATION, MAY/JUNE 2012.Second Semester Common to ECE, CSE, IT and Bio Medical Engineering, and Medical Electronics branchesEC 2151/147201/EC 25/10144 EC 205/080290007/EE 1152
 – 
ELECTRIC CIRCUITS ANDELECTRON DEVICES(Regulation 2008)Time : Three hours Maximum : 100 marksAnswer ALL questions.PART A
 – 
(10 x 2 = 20 marks)1. Write the voltage division rule, for the two different resistors connected in series to avoltage source.2. State maximum power transfer theorem.3.
A 2kΩ resistor in series with a 0.1
 μ
 
F capacitor is given an input of 10 V rms sinewave signal at 500 Hz. Determine the total impedance.4. Write the expression for the resonant frequency of a RLC series circuit.5. What is meant by PIV (Peak Inverse Voltage) of a Pn Junction diode?6. What is meant by zener effect?7.
Define and explain the term ‘early effect’.
 8. Differentiate between enhancement
 – 
type and depletion
 – 
type MOSFETs.9. What is tunneling phenomenon?10. Name two applications of photoconductive cells.
 
 ASK 
PART B
 – 
(5 x 16 = 80 marks)11. (a) (i) For the circuit shown below Fig. Q 11(a) (i), calculate the currentthrough the G
Ω
resistor, using loop analysis. (8)(ii) Calculate the effective resistance between points A and B in the circuitshown below Fig. Q. 11 (a) (ii). (8)(b) (i) Find the value of R1. For transfer of maximum power from source toload, for the circuit shown below Fig. Q 11 (a) (i). find alsocorresponding maximum power. (6)(ii) For the resistive network shown below Fig. Q. 11 (b) (ii), find the current
 
 ASK 
in each resistor using the superposition principle. (10)12 (a) In the RL, circuit shown below Fig. Q. 12 (a), the output is taken across theinductor. (16)A pulse input voltage with a pulse width of t
 p
is applied. Derive the response of the circuit and sketch the output curve.Or (b) Drive expressions for impedance, phase angle, voltages and current in a seriesRLC resonant circuit. Show their variations graphically with respect tofrequency. State how will you find the maximum voltages across L andacross C. (16)13. (a) (i) With the help of energy band diagram of PN junction diode, drive theexpression for the contact difference of potential. (6)(ii) Consider a germanium PN junction at
00 
K with doping concentration N
A
 1. x 10
² cm
 and D 2 x 10 cm in the p and n
sides of the junction respectively. Assuming the intrinsic carrier concentration of germanium
n  2. x 10 cm at 00º K, determine the contact potential
across the junction. (12)(iii)
The resistivities of the two sides of an abrupt germanium diode are 2Ω cm
(
 p
 
side) and 1Ω cm (
n
side) at 300ºK. The mobility of electrons and holesin germanium are
 μ
n
=
3800 cm² / V sec and
 μ
 p
 
= 1800cm²/V secrespectively. Calculate the height
 E 
0
of the potential
 – 
energy barrier.Or 

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