&

.
.
,

&

, .. ,

:
(
): , , CVD, sputtering

( )
: ,

(patterning) .

: LPCVD Si3N4

3D

in-plane
(out of plane)

 I I?-1


wafer

, .,



.

( ,
, & ),
.

 I??-2
?? 2

1796

,

.
,
, (XUV) extreme UV (EUV)

:

,


( )

 -1
1

.
: 100 100
0,5m,
,
0 5m (4

).

10.

A 3 : ,
.
.

.
&
.

A 2 :
. UV
crosslinking/
.

UV.
UV
( )

To
Si : 1-2m
H 3000-6000rpm 15-30 sec

t kp / w
2

k
p
w rpm/1000
8

 -1

.


.
:



UV.
9

sharp

ET
ln

E
1

:
( )

>

sharp .

E
ln 1
ET

1
10



+
+

+
-

+
+
+ &
+
- : .


-
.
.

11

1.
2. (SiO2)
3. ( )
( )
4 1 (soft baking):
4.
.
5.
6.
7.
8 2 (postbake hard baking):
8.
. ,
,
& .

9.
12


1 ((soft baking):
g)

. :

90-100oC 20min

75-85oC 45 sec hot plate (,

, ).
25%. Pre-bake
.

postbake

13

Plasma etching ( ) 2.

.

:

,
,

.. : - (CH3COC4H9)
-1
1 :
:
laser
:

: 2
:

14

 -2

2-5 min
2-5 min
2-5
2 5 min
i DI H2O

30 sec DI H2O
: ,
2
: , ,
2-5min (TCA) (TCE)
(TCE),


TCE , TCA ,

15

RCA clean: Si
1.
4:H2O2:H2O 1:1:5 1:2:7,
75 85C,
75-85
C 10-20min,
10 20 i
.

wafer Cd, Co, Cu, Fe, Ni,
Ag.
Ag
2. 2 (D 2)
(>8 M cm).
3 SiO2 HF:H2
3.
10:1 30sec.
4. 2 (D 2)
((>8
8 M cm).
cm)
5.
HCl:H2O2:H2O 1:1:6 1:2:8, 75-85C, 10

20min,, .
Al, Mg .
6. 2 (D 2)
((>8 M cm).
)

7.

16

 /wafer priming:
Primers

()
Si Si-O-Si
GaAs: GaAs
.
..

,

Stress

2 : priming
15min 80-90oC

17

 :
.. Cr
C
100 2000

VLSI

CAD

:

() chips
chips wafer.

Y e DA

(chip)
D masking levels,
levels ..

=10
10 masking
levels,
NDA

Y e

18

 10

19

o
o

z
:

20

&
& proximity 1:1 .
.

.. 10:1 &
.

: n-FET 21

.
Steppers: wafers

wafer
.

21


n-FET ( 4, 10, 16 19 . 47-50).

.

22

 2

Etch-back

, ,
&

23

Lift-off

&

&

etch-back & lift-off

24


:


1985: Hg (365 nm)
2002: laser ArF ((deep
p UV 193 nm))
2011: plasma Sn (Tin-) CO2 laser
(Extreme UV 13.5 nm)
3

(registration):
( i
i )

25

o
o

z
:

26

 (contact printing):
1:1
: <0,5m

10-50m (proximity printing).

:

0.5 m

27

 10-50m (proximity printing)-2

lm

lm g
g

((




).
)

& g

=0,4m & g =50m lm =4.5m

=0,25 m (deep UV) & =15m lm =2m
: > g
.
28


10:1

.

: 0,2m UV
:

lm :
..
To NA

lm

NA

NA n sin

n ( n=1)

29

/ z lm 2 lm 2

tan

sin

n
2( NA)2

.
30

31

32

 :
32nm =193nm.
phase-shift masks
&

extreme UV (EUV) &
Phase-shift
Phase
shift masks ( )


.

(alternating)
(attenuated phase shift masks)

33

Ph
Phase-shift
hift masks
k

. E2 2
.
phase-shifter
phase shifter
.
180
d=(n-1)/2 n o .

34

Immersion (/) lithography

, >1
.

( H2O 193nm
1,44)

1 44)
( ):

30 40%
30-40%
( wafer flatness)

2x.

(.. IBM, AMD)
65nm 45nm
45nm.

35

 immersion
li h
lithography:
h
, &
,

& ,
193 nm
.

:
.

:
>500mm/s
500mm/s

watermarks &
((
)
)

& .

36

,
..

e-beam litho,
extreme UV,
X-ray
X ray litho &
ion-beam lithography.
37

 extreme UV (13.5nm)
: laser synchrotron (10-14 nm)

30 nm

.
:
EUV
EUV
() ()

Mo-Si 72% 13.5nm

. :
2nm 30 cm.

o (>100 W)

(&

38

 extreme UV (13.5nm)
EUV

39

-1

1


,,

&

.
: SEM e nm.

:

PMMA &
PBS 0.1m
: COP.

1 m.

40

E-Beam Lithography -

( e > keV < 0.1 nm)
5 nm.

&

100nm 10nm.
E-Beam Lithography
: 10 wafers/hr
<0.25 m

. 5-10 US$

(proximity effect)

41

-2

2
Proximity effect:

eV.


.
: 100
20 keV PMMA
0.4m.
e

(3.5m) e
m
.

:

.

42


synchrotron
& 1nm.
30 nm.
, 1:1
He.
:
T

1nm
(12 m) , .. Si SiC.
(( 0.5m)) , ..
Au, W, Ta .
proximity

UV

&

aspect ratio

43

 aspect ratio

.
&

&

25-35%
.
1m 10%

44


-1
e

(20 30 )
(20-30nm)

-, e-beam & -ray litho.
:
1: .
2: (.. Ion
mixing,
g, amorphization,
p
, implantation,
p
, sputter
p
etching)
g)

1.

((..

Ga+, H+). ebeam.

2. .
.. 100 keV H2+.
5x.
45


-2

proximity-effect,

50 +

60
keV PMMA Au & Si.
0.4 m 0.1m.
PMMA Si
Au.

46

 n-FET

47

1. : FET n
p-Si:B
2. : () 100 nm SiO2:
& .
3. LPCVD Si3N4
.
4. : Si3N4 ,
.
.
5. : Si3N4
(Reactive Ion Etching)
6. :

48

7. : Si3N4

(lateral oxidationbirds peak).

.
8. Si3N4
9. LPCVD poly
polySi
Si .

10. : polySi ,
. polySi.
11. :
( polySi)
12.
13. :
o
.

49

14. P ( n) .


(selfalignment/)
15. : LPCVD SiO2
stepcoverage.
16. & : SiO2 , ,
.
.

17. :
.
18. : Al ()
sputtering
19. : Al ()
.

20. :
Al ()
50

21. . Al

8 / : , LPCVD
Si3N4, LPCVD poly-Si, , sputtering

4 :

51

52