* , 1000, , . .

No. 8, . 1, E-mail: dgt@tu-sofia.bg

Abstract: This article discusses the basic approaches when building
electrometic devices. Discussed are the possible noise sources in measuring
circuits. Discuss the physical reasons for their occurrence and their ways for
reduction. Defined are the basic principles for the construction of the
measuring devices to reduce noise in the electrometric current
measurements.
Keywords: electrometic devices, noise, measuring circuits, current
measurements

.
.

.
(ADC).

,
.


-
[2].
[1,2,4]
.
, .



.

166


( G )
( pF)
1kHz.
.
[4] ,
-
p-n MOSFET.
,
.


,
.



p-n .
- , 1kHz
p-n .
-

p-n .
.


.

p-n
.
p-n
.
p-n
.
-
20 mV,
.
[ ]

167

, ,
. p-n

Rp-n=dV/dI .
p-n - JFET
10mV 300 Rp-n=1.5
p-n in 0.106 fA / Hz
2

,


.
pn
10mV
,

( p-n ),

.

,
.

- .
- ( 100kHz )

,

.

.

,

[3].

.1,
168


JFET
.

.1. .

I-V
- a .2

.2. I-V .

169

 JFET
TR1
R4
.


.
VT1-VT4 OY1.

Rf.

.3. I-V .

.4. I-V .

170

 .3 .4
I-V
10fA,
.
,
10 Hz
1/f2
.

,
I-V
.


I-V ,
JFET .
fA

.

-01/99

[1] . .: , 1979
[2] .; ,. 1986.
[3] J Max; Mthodes et techniques de traitement du signal et applications aux mesures
physiques; Paris 1982
[4] Robinson F. N. H, Noise and Fluctuations in Electronic Devices and Circuits Clarendon
Press, Oxford, 1974

171