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MOSFETCh7Intro

MOSFETCh7Intro

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Published by: openid_ZufDFRTu on May 02, 2009
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09/26/2010

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Introduction toMetal-Oxide-SemiconductorField Effect Transistors(MOSFETs)
Chapter 7, Anderson andAnderson
 
MOSFET
HistoryStructureFutureReviewThreshold VoltageI-V CharacteristicsModifications to I-V:
 – Depletion layer correction (Sup. 3) – Mobility, Vsat – Short Channel Effects – Channel Length Modulation – Channel Quantum Effects
MOSFET Scaling and Current Topics (Literature + Sup. 3)Subthreshold Behavior Damage and Temperature (Sup. 3)Spice (Sup. 3)HFET, MESFET, JFET, DRAM, CCD (Some in Sup. 3)
 
MOSFET History (Very Short!)
First Patents:
 – 1935
Variable Capacitor Proposed:
 – 1959
Silicon MOS:
 – 1960
Clean PMOS, NMOS:
 – Late 1960s, big growth!
CCDs:
 – 1970s, Bell Labs
Switch to CMOS:
 – 1980s

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