DISCRETE SEMICONDUCTORS

DATA SHEET

BF245A; BF245B; BF245C N-channel silicon field-effect transistors

Product specication Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

FEATURES Interchangeability of drain and source connections Frequencies up to 700 MHz. APPLICATIONS LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot yfs Crs total power dissipation forward transfer admittance reverse transfer capacitance Tamb = 75 C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 C VDS = 20 V; VGS = 1 V; f = 1 MHz; Tamb = 25 C ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 CONDITIONS Fig.1 PINNING PIN 1 2 3

BF245A; BF245B; BF245C

SYMBOL d s g drain source gate

DESCRIPTION

handbook, halfpage 2

3 g
MAM257

d s

Simplified outline (TO-92 variant) and symbol.

MIN. 0.25 2 6 12 3

TYP.

MAX. 30 8 30 6.5 15 25 300 6.5

UNIT V V V mA mA mA mW mS pF

1.1

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGDO VGSO ID IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-drain voltage gate-source voltage drain current gate current total power dissipation storage temperature operating junction temperature up to Tamb = 75 C; open source open drain

BF245A; BF245B; BF245C

CONDITIONS up to Tamb = 90 C; note 1

MIN.

MAX. 30 30 30 25 10 300 300 +150 150 V V V

UNIT

mA mA mW mW C C

65

1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient thermal resistance from junction to ambient STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff VGS PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF245A BF245B BF245C IDSS drain current BF245A BF245B BF245C IGSS gate cut-off current VGS = 20 V; VDS = 0 VGS = 20 V; VDS = 0; Tj = 125 C Note 1. Measured under pulse conditions: tp = 300 s; 0.02. VDS = 15 V; VGS = 0; note 1 2 6 12 6.5 15 25 5 0.5 mA mA mA nA A CONDITIONS IG = 1 A; VDS = 0 ID = 10 nA; VDS = 15 V ID = 200 A; VDS = 15 V 0.4 1.6 3.2 2.2 3.8 7.5 V V V MIN. 30 0.25 8.0 MAX. V V UNIT CONDITIONS in free air VALUE 250 200 UNIT K/W K/W

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; unless otherwise specified. SYMBOL Cis Crs Cos gis gos yfs yrs yos fgfs F PARAMETER input capacitance reverse transfer capacitance output capacitance input conductance output conductance forward transfer admittance reverse transfer admittance output admittance cut-off frequency noise gure CONDITIONS

BF245A; BF245B; BF245C

MIN. 3

TYP. MAX. 4 1.1 1.6 250 40 6 1.4 25 700 1.5 6.5

UNIT pF pF pF S S mS mS mS S MHz dB

VDS = 20 V; VGS = 1 V; f = 1 MHz VDS = 20 V; VGS = 1 V; f = 1 MHz VDS = 20 V; VGS = 1 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0; gfs = 0.7 of its value at 1 kHz VDS = 15 V; VGS = 0; f = 100 MHz; RG = 1 k (common source); input tuned to minimum noise

handbook, halfpage

10

MGE785

handbook, halfpage

MGE789

IGSS (nA) 1

ID

(mA) 5

4
typ

101

2
102

1
103

50

100

Tj (C)

150

0 4

VGS (V)

VDS = 0; VGS = 20 V.

VDS = 15 V; Tj = 25 C.

Fig.2

Gate leakage current as a function of junction temperature; typical values.

Fig.3

Transfer characteristics for BF245A; typical values.

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

BF245A; BF245B; BF245C

handbook, halfpage

MBH555

ID (mA) 5

handbook, halfpage

15

MGE787

ID (mA) VGS = 0 V 10

3 0.5 V 2 5

1 V 1.5 V

10

VDS (V)

20

0 4

VGS (V)

VDS = 15 V; Tj = 25 C.

VDS = 15 V; Tj = 25 C.

Fig.4

Output characteristics for BF245A; typical values.

Fig.5

Transfer characteristics for BF245B; typical values.

handbook, halfpage

15

MBH553

handbook, halfpage

30

MGE788

ID (mA) 10 VGS = 0 V

ID (mA) 20

0.5 V 1 V 5 1.5 V 2 V 2.5 V 0 0 10 VDS (V) 20 0 10 5 VGS (V) 0 10

VDS = 15 V; Tj = 25 C.

VDS = 15 V; Tj = 25 C.

Fig.6

Output characteristics for BF245B; typical values.

Fig.7

Transfer characteristics for BF245C; typical values.

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

BF245A; BF245B; BF245C

handbook, halfpage

30

MBH554

MGE775

handbook, halfpage

ID (mA) 20 VGS = 0 V

ID (mA) 3 VGS = 0 V

0.5 V

1 V 10 2 V
1

1 V 1.5 V

3 V 4 V 0 0 10 VDS (V) 20
0 0 50 100

Tj (C)

150

VDS = 15 V; Tj = 25 C.

VDS = 15 V.

Fig.8

Output characteristics for BF245C; typical values.

Fig.9

Drain current as a function of junction temperature; typical values for BF245A.

MGE776

handbook, halfpage

15

handbook, halfpage

20

MGE779

ID (mA) 10

ID (mA)

16 VGS = 0 V

12 VGS = 0 V 8 5 1 V 2 V 4

2 V

4 V 0

0 0 50 100 Tj (C) 150

50

100

Tj (C)

150

VDS = 15 V.

VDS = 15 V.

Fig.10 Drain current as a function of junction temperature; typical values for BF245B.

Fig.11 Drain current as a function of junction temperature; typical values for BF245C.

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

BF245A; BF245B; BF245C

103 handbook, halfpage gis (A/V) 102 bis

MGE778

102 bis (mA/V) 10

104 handbook, halfpage brs (A/V) 103 Crs

MGE780

10 Crs (pF) 1

gis

brs 10 1 102

101

1 10 102 f (MHz)

101 103

10 10

102

f (MHz)

102 103

VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C.

Fig.12 Input admittance; typical values.

Fig.13 Common source reverse admittance as a function of frequency; typical values.

handbook, gfs, halfpage

10

MGE782

103 handbook, halfpage gos (A/V) 102

MGE783

10 bos (mA/V) 1 gos

bfs

(mA/V)

bos

6 gfs 4 10 2 101

bfs 1 10 102 f (MHz) 102 103

0 10

102

f (MHz)

103

VDS = 15 V; VGS = 0; Tamb = 25 C.

VDS = 15 V; VGS = 0; Tamb = 25 C.

Fig.14 Common-source forward transfer admittance as a function of frequency; typical values.

Fig.15 Common-source output admittance as a function of frequency; typical values.

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

BF245A; BF245B; BF245C

handbook, halfpage

MGE777

MGE781

handbook, halfpage

1.5

Cis (pF) 4

Crs (pF) typ

typ
1

0 0

8 10 VGS (V)

0.5 0

8 10 VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 C.

VDS = 20 V; f = 1 MHz; Tamb = 25 C.

Fig.16 Input capacitance as a function of gate-source voltage; typical values.

Fig.17 Reverse transfer capacitance as a function of gate-source voltage; typical values.

handbook, halfpage

MGE791

|yfs| (mA/V) 6 BF245A BF245B BF245C

handbook, V halfpage

10

MGE784

GSoff at ID = 10 nA (V)

6 4 4 2 BF245C BF245B 0 0 BF245A 0 10 20 IDSS at VGS = 0 (mA) 30

10

15 ID (mA)

20

VDS = 15 V; f = 1 kHz; Tamb = 25 C.

VDS = 15 V; Tj = 25 C.

Fig.18 Forward transfer admittance as a function of drain current; typical values.

Fig.19 Gate-source cut-off voltage as a function of drain current; typical values.

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

BF245A; BF245B; BF245C

103 handbook, halfpage RDSon (k) 102

MGE790

handbook, halfpage

MGE786

F (dB) 2 typ

10

BF245A BF245B BF245C

101 0

3 VGS (V)

0 1 10

102

f (MHz)

103

VDS = 0; f = 1 kHz; Tamb = 25 C.

VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C. Input tuned to minimum noise.

Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values.

Fig.21 Noise figure as a function of frequency; typical values.

1996 Jul 30

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

PACKAGE OUTLINE

BF245A; BF245B; BF245C

handbook, full pagewidth

0.40 min

4.2 max 1.7 1.4 1 4.8 max 2.54 3 2

5.2 max

12.7 min 0.48 0.40

0.66 0.56 2.5 max

(1)
MBC015 - 1

Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled.

Fig.22 TO-92 variant.

1996 Jul 30

10

Philips Semiconductors

Product specication

N-channel silicon eld-effect transistors

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

BF245A; BF245B; BF245C

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Jul 30

11