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08 Simple CMOS Fab

08 Simple CMOS Fab

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Published by Ajay Yadav
CMOS
CMOS

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Categories:Topics
Published by: Ajay Yadav on Sep 06, 2013
Copyright:Attribution Non-commercial

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09/06/2013

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8 - 1
EE-452 USNA
CMOS Fabrication
(with extended comments
 
8 - 2
EE-452 USNA
CMOS FABRICATION TECHNOLOGY 
 
The following discussion will concentrate on the well-established CMOS fabrication technology, which requires thatboth n-channel (nMOS) and p-channel (pMOS) transistors bebuilt on the same chip substrate. To accommodate both nMOSand pMOS devices, special regions must be created in which
the semiconductor type is opposite to the substrate type.
These regions are called wells or tubs. A p-well is created in ann-type substrate or, alternatively, an n- well is created in a p-type substrate. In the simple n-well CMOS fabricationtechnology, the nMOS transistor is created in the p-typesubstrate, and the pMOS transistor is created in the n-well,
which is built-in into the p-type substrate.
-V
SS
 +V
DD
 SDDSGG
p
+
 p
+
 p-welln
+
 n
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 n
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 p
+
 
OxideIsolation
p-MOSFET n-MOSFET
 
8 - 3
EE-452 USNA
CMOS FABRICATION TECHNOLOGY 
 
The simplified process sequence for the fabrication of CMOS integrated circuits on a p- type silicon substrate isshown.
The process starts with the creation of the n-well regions for pMOS transistors, by impurity implantation into the substrate.
Then, a thick oxide is grown in the regions surrounding thenMOS and pMOS active regions.
The thin gate oxide is subsequently grown on the surfacethrough thermal oxidation.
These steps are followed by the creation of n+ and p+regions (source, drain and channel-stop implants).
Finally the metallization is created (creation of metalinterconnects).
-V
SS
 +V
DD
 SDDSGG
p
+
 p
+
 p-welln
+
 n
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 n
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 p
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OxideIsolationMetallization

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/*********** DO NOT ALTER ANYTHING BELOW THIS LINE ! ************/ var s_code=s.t();if(s_code)document.write(s_code)//-->