• Embed Doc
  • Copy Link
  • Readcast
  • Collections
  • CommentGo Back
Download
 
Silicon-controlled rectifier
From Wikipedia, the free encyclopedia
(Redirected fromSilicon controlled rectifier )Jump to:navigation, search A
silicon-controlled rectifier
(or 
semiconductor-controlled rectifier
) is a four-layer solid state device that controlscurrent.The name "silicon controlled rectifier" or 
SCR 
isGeneral Electric's trade name for a type of thyristor . The SCR was developed by a team of power engineers led by Gordon Hall and commercialised by Frank W. "Bill"Gutzwiller in1957.
Contents
[hide]
•
1 Theory of operation
•
2 Modes of operation
•
3 See also
•
4 External links
[edit] Theory of operation
An SCR is a type of rectifier , controlled by a logic gatesignal. It is a four-layer, three- terminal device. A p-type layer  acts as ananodeand an n-type layer  as a cathode; the p- type layer closer to the n-type(cathode) acts as a gate.An SCR (left) can be thought of as twoBJT'sworking together (right).
[edit] Modes of operation
In the normal "off" state, the device restricts current to theleakage current. When the gateto cathode voltage exceeds a certain threshold, the device turns "on" and conductscurrent. The device will remain in the "on" state even after gate current is removed so
of 00

Leave a Comment

You must be to leave a comment.
Submit
Characters: ...
You must be to leave a comment.
Submit
Characters: ...