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1Motorola Bipolar Power Transistor Device Data
PlasticMedium-Power   ComplementarySiliconTransistors    
...designed for general–purpose amplifier and low–speed switching applications.
•
High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc
•
Collector–Emitter Sustaining Voltage — @ 100 mAdcVCEO(sus)= 60 Vdc (Min) — TIP120, TIP125VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127
•
Low Collector–Emitter Saturation Voltage —VCE(sat)= 2.0 Vdc (Max) @ IC= 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC= 5.0 Adc
•
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
•
TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Rating
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
Symbol
ÎÎΠÎÎΠÎÎΠÎÎΠ
TIP120,TIP125
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
TIP121,TIP126
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
TIP122,TIP127
ÎÎΠÎÎΠÎÎΠÎÎΠ
Unit
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Collector–Emitter Voltage
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
VCEO
ÎÎΠÎÎΠÎÎΠÎÎΠ
60
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
80
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
100
ÎÎΠÎÎΠÎÎΠÎÎΠ
Vdc
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Collector–Base Voltage
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
VCB
ÎÎΠÎÎΠÎÎΠÎÎΠ
60
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
80
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
100
ÎÎΠÎÎΠÎÎΠÎÎΠ
Vdc
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Emitter–Base Voltage
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
VEB
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
5.0
ÎÎΠÎÎΠÎÎΠÎÎΠ
Vdc
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Collector Current—ContinuousPeak
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
IC
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
5.08.0
ÎÎΠÎÎΠÎÎΠÎÎΠ
Adc
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Base Current
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
IB
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
120
ÎÎΠÎÎΠÎÎΠÎÎΠ
mAdc
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Total Power Dissipation @ TC= 25
_       
CDerate above 25
_       
C
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
PD
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
650.52
ÎÎΠÎÎΠÎÎΠÎÎΠ
WattsW/ 
_       
C
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Total Power Dissipation @ TA= 25
_       
CDerate above 25
_       
C
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
PD
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
2.00.016
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
WattsW/ 
_       
C
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Unclamped Inductive Load Energy (1)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
E
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
50
ÎÎΠÎÎΠÎÎΠÎÎΠ
mJ
ÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎΠ
Operating and Storage Junction,Temperature Range
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
TJ, Tstg
ÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎΠ
 –65 to +150
ÎÎΠÎÎΠÎÎΠÎÎΠ
_       
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠ
Characteristic
ÎÎÎÎΠÎÎÎÎΠÎÎÎÎΠÎÎÎÎΠ
Symbol
ÎÎÎÎÎΠÎÎÎÎÎΠÎÎÎÎÎΠÎÎÎÎÎΠ
Max
ÎÎΠÎÎΠÎÎΠÎÎΠ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠ
Thermal Resistance, Junction to Case
ÎÎÎÎΠÎÎÎÎΠÎÎÎÎΠÎÎÎÎΠ
R
θ
JC
ÎÎÎÎÎΠÎÎÎÎÎΠÎÎÎÎÎΠÎÎÎÎÎΠ
1.92
ÎÎΠÎÎΠÎÎΠÎÎΠ
_       
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎΠ
Thermal Resistance, Junction to Ambient
ÎÎÎÎΠÎÎÎÎΠÎÎÎÎΠÎÎÎÎΠ
R
θ
JA
ÎÎÎÎÎΠÎÎÎÎÎΠÎÎÎÎÎΠÎÎÎÎÎΠ
62.5
ÎÎΠÎÎΠÎÎΠÎÎΠ
_       
C/W(1)IC= 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC= 20 V, RBE= 100
Ω
.
800020406080100120160
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
   P   D ,   P   O   W   E   R   D   I   S   S   I   P   A   T   I   O   N   (   W   A   T   T   S   )
402060140TC4.002.01.03.0TATATC
Preferred
devices are Motorola recommended choices for future use and best overall value.
MOTOROLA    
SEMICONDUCTOR TECHNICAL DATA
Order this documentby TIP120/D
 
©
Motorola, Inc. 1995
TIP120    TIP121   TIP122    TIP125    TIP126    TIP127    
DARLINGTON5 AMPERECOMPLEMENTARY SILICONPOWER TRANSISTORS60–80–100 VOLTS65 WATTS
*Motorola Preferred Device
*   
NPN    PNP    
*   *   *   
CASE 221A–06TO–220AB
*   *   
REV 2
 
TIP120TIP121TIP122TIP125TIP126TIP127     
2Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
ELECTRICAL CHARACTERISTICS
(TC= 25
_       
C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Characteristic
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
Symbol
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
Min
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
Max
ÎÎΠÎÎΠÎÎΠÎÎΠ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Collector–Emitter Sustaining Voltage (1)(IC= 100 mAdc, IB= 0)TIP120, TIP125TIP121, TIP126TIP122, TIP127
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
VCEO(sus)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
6080100
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 — — —
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Collector Cutoff Current(VCE= 30 Vdc, IB= 0)TIP120, TIP125(VCE= 40 Vdc, IB= 0)TIP121, TIP126(VCE= 50 Vdc, IB= 0)TIP122, TIP127
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
ICEO
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 — — —
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
0.50.50.5
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Collector Cutoff Current(VCB= 60 Vdc, IE= 0)TIP120, TIP125(VCB= 80 Vdc, IE= 0)TIP121, TIP126(VCB= 100 Vdc, IE= 0)TIP122, TIP127
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
ICBO
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 — — —
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
0.20.20.2
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Emitter Cutoff Current(VBE= 5.0 Vdc, IC= 0)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
IEBO
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 —
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
2.0
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
DC Current Gain(IC= 0.5 Adc, VCE= 3.0 Vdc)(IC= 3.0 Adc, VCE= 3.0 Vdc)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
hFE
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
10001000
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 — —
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Collector–Emitter Saturation Voltage(IC= 3.0 Adc, IB= 12 mAdc)(IC= 5.0 Adc, IB= 20 mAdc)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
VCE(sat)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 — —
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
2.04.0
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Base–Emitter On Voltage(IC= 3.0 Adc, VCE= 3.0 Vdc)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
VBE(on)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 —
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
2.5
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Small–Signal Current Gain(IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
hfe
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
4.0
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 —
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΠ
Output Capacitance(VCB= 10 Vdc, IE= 0, f = 0.1 MHzTIP125, TIP126, TIP127TIP120, TIP121, TIP122
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
Cob
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
 — —
ÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠÎÎÎΠ
300200
ÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠÎÎΠ
pF(1)Pulse Test: Pulse Width
v        
300
µ
s, Duty Cycle
v        
2%.
Figure 2. Switching Times Test Circuit
5.00.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
   t ,   T   I   M   E   (   s   )
     µ
2.01.00.50.050.20.30.50.71.02.03.0100.30.7PNPNPNtftrtstd@ VBE(off)= 0
V2approx+8.0 VV1approx –12 Vtr, tf 
≤
10 nsDUTY CYCLE = 1.0%25
µ
s0RB51D1+4.0 VVCC –30 VRCTUT
≈
8.0 k
≈
120SCOPE
for tdand tr, D1is disconnectedand V2= 0For NPN test circuit reverse all polarities.
RB& RCVARIED TO OBTAIN DESIRED CURRENT LEVELSD1MUST BE FAST RECOVERY TYPE, eg:1N5825 USED ABOVE IB 
≈
100 mAMSD6100 USED BELOW IB 
≈
100 mAVCC= 30 VIC /IB= 250IB1= IB2TJ= 25
°
C3.00.20.10.075.07.0
 
TIP120TIP121TIP122TIP125TIP126TIP127     
3Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)1.00.010.010.50.20.10.050.02
   r   (   t   ) ,   T   R   A   N   S   I   E   N   T   T   H   E   R   M   A   L   R   E   S   I   S   T   A   N   C   E   (   N   O   R   M   A   L   I   Z   E   D   )
0.050.10.20.51.02.05.01020501002001.0 k500Z
θ
JC(t)= r(t) R
θ
JCR
θ
JC= 1.92
°
C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk)– TC= P(pk)Z
θ
JC(t)P(pk)t1t2DUTY CYCLE, D = t1 /t2D = 0.50.20.050.020.01SINGLE PULSE0.10.70.30.070.030.02201.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)105.02.01.00.022.05.02050100BONDING WIRE LIMITEDTHERMALLY LIMITED@ TC= 25
°
C (SINGLE PULSE)0.5
   I   C ,   C   O   L   L   E   C   T   O   R   C   U   R   R   E   N   T   (   A   M   P   )
TJ= 150
°
Cdc1ms100
µ
s0.20.1100.05SECOND BREAKDOWN LIMITEDCURVES APPLY BELOWRATED VCEO5ms3.07.03070TIP120, TIP125TIP121, TIP126TIP122, TIP127500
µ
s
There are two limitations on the power handling ability of atransistor: average junction temperature and second break-down. Safe operating area curves indicate IC– VCElimits ofthe transistor that must be observed for reliable operation,i.e., the transistor must not be subjected to greater dissipa-tion than the curves indicate.The data of Figure 5 is based on TJ(pk)= 150
_       
C; TCisvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk)< 150
_       
C. TJ(pk)may be calculated from the data in Figure 4.At high case temperatures, thermal limitations will reduce thepower that can be handled to values less than the limitationsimposed by second breakdown
3000.1VR, REVERSE VOLTAGE (VOLTS)302.05.01020100500.20.51.0
   C ,   C   A   P   A   C   I   T   A   N   C   E   (   p   F   )
10050TJ= 25
°
CCib70CobPNPNPN
Figure 6. Small–Signal Current Gain
10,0001.0f, FREQUENCY (kHz)10205010020010002.05.0103000500100TC= 25
°
CVCE= 4.0 VdcIC= 3.0 Adc1000PNPNPN
Figure 7. Capacitance
50500
   h   f   e ,   S   M   A   L   L  –   S   I   G   N   A   L   C   U   R   R   E   N   T   G   A   I   N
500020003002003020200
of 00

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