Welcome to Scribd. Sign in or start your free trial to enjoy unlimited e-books, audiobooks & documents.Find out more
Standard view
Full view
of .
Look up keyword
Like this
0 of .
Results for:
No results containing your search query
P. 1
By Kent Walters and Bob Werner

By Kent Walters and Bob Werner



|Views: 60|Likes:
Published by Farshad yazdi

More info:

Published by: Farshad yazdi on Aug 04, 2009
Copyright:Attribution Non-commercial


Read on Scribd mobile: iPhone, iPad and Android.
download as PDF, TXT or read online from Scribd
See more
See less





by Kent Walters and Bob Werner 
Schottky rectifiers have beenused for over 25 years in thepower supply industry. Theprimary advantages are verylow forward voltage drop andswitching speeds thatapproach zero time makingthem ideal for output stages ofswitching power supplies. Thislatter feature has alsostimulated their additional usein very high frequencyapplications including very lowpower involving signal andswitching diode requirementsof less than 100 picoseconds.These require small Schottkydevices with low capacitance.The reverse recovery time ofSchottky diodes are extremelyfast (but soft) recoverycharacteristics. What littlereverse recovery time theymay exhibit is primarilydictated by their capacitancerather than minority carrierrecombination as inconventional pn junctionrectifiers. This characteristicprovides very little reversecurrent overshoot whenswitching the Schottky fromthe forward conducting modeto the reverse blocking state.The combination of very “fast-soft switching properties” of aSchottky can also eliminatethe need for snubber circuits inmany applications that mayotherwise be required with fastor ultrafast rectifiers displayingabrupt recoverycharacteristics. Thesefeatures make schottkyrectifiers a very attractivechoice for low parasiticswitching losses.Design considerations withSchottky devices are limited insome applications comparedto pn junction rectifiersbecause their reverse leakagecurrents are many timeshigher. Also Schottky rectifiershave maximum rated junctiontemperatures typically in therange of 125°C to 175°C,compared to the typical 200°Cfor conventional pn junctionswhich further influencesleakage current behavior.For some applications,Schottky devices are limited inavailable reverse blockingvoltage ratings compared toconventional pn junctionrectifiers. Nevertheless with judicious selection, manyapplications are optimized withSchottky rectifiers and theirunique operatingcharacteristics. Schottkyrectifiers seldom exceed 100volts in their working peakreverse voltage (V
), sincedevices moderately above thisrating level will result in forwardvoltages equal to or greaterthan equivalent pn junctionrectifiers.The Schottky rectifierproperties described above areprimarily determined by themetal energy barrier height ofmaterial deposited on thesilicon by the manufacturer. Ametal with a low energy barrierheight will minimize forwardvoltage, but will also berestricted
in its hightemperature operatingcapability and have very highreverse leakage currents. Ahigh barrier metal heightselection will minimizetemperature and leakagecurrent sensitivity but willincrease the forward voltage.Depending
on the applicationrequirements, these designfeatures
can be used as atradeoff in proper choice whenselecting a schottky rectifierusing different barrier metalsfrom a manufacturer.Microsemi Corporation offers avariety of barrier metal optionson an n-epitaxial layer over alow resistivity substrate foroptimizing parametricperformance in addition to aprotective guardring andpassivation. This configurationis
shown in Figure 1. A reliableschottky junction is designedwith a
pn junction guard ring to
Introductionto SchottkyRectifiers
Series 401

You're Reading a Free Preview

/*********** DO NOT ALTER ANYTHING BELOW THIS LINE ! ************/ var s_code=s.t();if(s_code)document.write(s_code)//-->