MOS Transistors

Yannis Tsividis
pn Junctions Under Reverse Bias Part 1
These slides are based on Y. Tsividis and C.
McAndrew, Operation and Modeling of the
MOS Transistor, Copyright Oxford University
Press, 2011. They are meant to be part of a
lecture, and may be incomplete or may not even
make sense without the accompanying
narration.

2

Reverse bias:

Step junction assumed
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011 2
Charge neutrality:
1
+
2
= 0

2
=

q(

side pside
Reverse bias raises the energy barrier
that electrons have to climb to get from
the n-side to the p-side.
Leakage current flows
Nonequilibrium
Based on Tsividis/McAndrew; Copyright Oxford University Press, 2011 3
n
p

2

(y)

()
()


Area=
1

Area=
2

0
0

2

2

Assume
+
junction (heavily-doped n). Then a detailed analysis gives:

1

2

1

2

=

2

( : Cross-sectional area as seen from above)
Reverse bias, contd; using basic laws from electrostatics, we obtain: