February 2006

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2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
www.fairchildsemi.com 1
FDS8884
N-Channel PowerTrench

MOSFET
30V, 8.5A, 23m
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.

Features
Max r
DS(on)
= 23m at V
GS
= 10V, I
D
= 8.5A
Max r
DS(on)
= 30m at V
GS
= 4.5V, I
D
= 7.5A
Low gate charge
100% R
G
Tested
RoHS Compliant
L
E
A
D
FR EE
M
T
A
E
L
N
T
I
O
M
P
E
N
I
MOSFET Maximum Ratings T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage 20 V
I
D
Drain Current Continuous (Note 1a) 8.5 A
Pulsed 40 A
E
AS
Single Pulse Avalanche Energy (Note 2) 32 mJ
P
D
Power dissipation 2.5 W
Derate above 25
o
C 20 mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
JA
Thermal Resistance, Junction to Ambient (Note 1a) 50
o
C/W
R
JA
Thermal Resistance, Junction to Case (Note 1) 25
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8884 FDS8884 SO-8 330mm 12mm 2500 units
4
3
2
1
5
6
7
8
S
D
S
S
SO-8
D
D
D
G
F
D
S
8
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FDS8884 Rev. A
www.fairchildsemi.com 2
Electrical Characteristics T
J
= 25C unless otherwise noted
Off Characteristics
On Characteristics (Note 3)
Dynamic Characteristics
Switching Characteristics (Note 3)
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250A, V
GS
= 0V 30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250A, referenced to
25
o
C
23 mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V 1
A
V
GS
= 0V T
J
= 125
o
C 250
I
GSS
Gate to Source Leakage Current V
GS
= 20V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250A 1.2 1.7 2.5 V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250A, referenced to
25
o
C
-4.9 mV/
o
C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 8.5A, 19 23
m
V
GS
= 4.5V , I
D
= 7.5A, 23 30
V
GS
= 10V, I
D
= 8.5A,
T
J
= 125
o
C
26 32
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
475 635 pF
C
oss
Output Capacitance 100 135 pF
C
rss
Reverse Transfer Capacitance 65 100 pF
R
G
Gate Resistance f = 1MHz 0.9 1.6
t
d(on)
Turn-On Delay Time
V
DD
= 15V, I
D
= 8.5A
V
GS
= 10V, R
GS
= 33
5 10 ns
t
r
Rise Time 9 18 ns
t
d(off)
Turn-Off Delay Time 42 68 ns
t
f
Fall Time 21 34 ns
Q
g
Total Gate Charge
V
DS
= 15V, V
GS
= 10V
I
D
= 8.5A
9.2 13 nC
Q
g
Total Gate Charge
V
DS
= 15V, V
GS
= 5V
I
D
= 8.5A
5.0 7 nC
Q
gs
Gate to Source Gate Charge 1.5 nC
Q
gd
Gate to Drain Charge 2.0 nC
V
SD
Source to Drain Diode Voltage
I
SD
= 8.5A 0.9 1.25 V
I
SD
= 2.1A 0.8 1.0 V
t
rr
Reverse Recovery Time
I
F
= 8.5A, di/dt = 100A/s

33 ns
Q
rr
Reverse Recovery Charge 20 nC
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while

R
CA
is determined by the users board design.
2: Starting T
J
= 25C, L = 1mH, I
AS
= 8A, V
DD
= 27V, V
GS
= 10V.
3: Pulse Test:Pulse Width <300s, Duty Cycle <2%.
b) 105C/W when
mounted on a .04 in
2
pad of 2 oz copper

minimun pad
c) 125C/W when
mounted on a
Scale 1 : 1 on letter size paper
a) 50C/W when
mounted on a 1 in2
pad of 2 oz copper
F
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FDS8884 Rev. A
www.fairchildsemi.com 3
Typical Characteristics T
J
= 25C unless otherwise noted
Figure 1. On Region Characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 5.0V
V
GS
= 10V
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
Figure 2.
5 10 15 20 25 30 35 40
0.5
1.0
1.5
2.0
2.5
3.0
N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N

T
O

S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
I
D
, DRAIN CURRENT(A)
V
GS
= 3V
V
GS
= 10V V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 3.5V
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
Normalized On-Resistance vs Drain
current and Gate Voltage
Figure 3. Normalized
-80 -40 0 40 80 120 160
0.6
0.8
1.0
1.2
1.4
1.6


I
D
= 8.5A
V
GS
= 10V
T
J
, JUNCTION TEMPERATURE (
o
C)

N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N

T
O

S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
On Resistance vs Junction
Temperature
Figure 4.
2 4 6 8 10
15
20
25
30
35
40
45
50
55
60
T
J
= 25
o
C
T
J
= 150
o
C
I
D
= 8.5A PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
S
(
O
N
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E

(
m

)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1 2 3 4 5
0
5
10
15
20
25
30
35
40
V
DD
= 5V


T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
10


V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,

R
E
V
E
R
S
E

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
J
= -55
o
C
T
J
= 25
o
C
T
A
= 150
o
C
V
GS
= 0V
40
Source to Drain Diode Forward Voltage
vs Source Current
F
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FDS8884 Rev. A
www.fairchildsemi.com 4
Figure 7.
0 2 4 6 8 10
0
2
4
6
8
10


V
DD
= 20V
V
DD
= 10V
V
G
S
,

G
A
T
E

T
O

S
O
U
R
C
E

V
O
L
T
A
G
E
(
V
)
Qg, GATE CHARGE(nC)
V
DD
= 15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
200
300
400
500
600
700


f = 1MHz
VGS = 0V
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
Capacitance vs Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
0.01 0.1 1 10
1
10
20

STARTING T
J
= 125
o
C
STARTING T
J
= 25
o
C
I
A
S
,

A
V
A
L
A
N
C
H
E

C
U
R
R
E
N
T
(
A
)
20
t
AV
, TIME IN AVALANCHE(ms)
Figure 10.
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
9


V
GS
= 10V
V
GS
= 4.5V
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
, AMBIENT TEMPERATURE(
o
C)
R
JA
= 50
o
C/W
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 11.
0.1 1 10 100
0.01
0.1
1
10
100
DC
1s
100ms
10ms
1ms
100us
10us



I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25
o
C
Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
10
100
1000
V
GS
=10V
SINGLE PULSE
t, PULSE WIDTH (s)
P
(
P
K
)
,

P
E
A
K

T
R
A
N
S
I
E
N
T

P
O
W
E
R

(
W
)
2000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK

CURRENT AS FOLLOWS:
150 T
A

125
------------------------
Typical Characteristics T
J
= 25C unless otherwise noted
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1E-3
0.01
0.1
1
N
O
R
M
A
L
I
Z
E
D

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E
,

Z

J
A
t, RECTANGULAR PULSE DURATION(s)
D =0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
F
D
S
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FDS8884 Rev. A
www.fairchildsemi.com 5
Figure 13. Transient Thermal Response Curve
Typical Characteristics T
J
= 25C unless otherwise noted
FDS8884 Rev. A
www.fairchildsemi.com
6
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TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx
ActiveArray
Bottomless
Build it Now
CoolFET
CROSSVOLT
DOME
EcoSPARK
E
2
CMOS
EnSigna
FACT
FACT Quiet Series
FAST

FASTr
FPS
FRFET
GlobalOptoisolator
GTO
HiSeC
I
2
C
i-Lo
ImpliedDisconnect
IntelliMAX
ISOPLANAR
LittleFET
MICROCOUPLER
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC

OPTOPLANAR
PACMAN
POP
Power247
PowerEdge
PowerSaver
PowerTrench

QFET

QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SerDes
ScalarPump
SILENT SWITCHER

SMART START
SPM
Stealth
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TCM
TinyLogic

TINYOPTO
TruTranslation
UHC
UltraFET

UniFET
VCX
Wire
Across the board. Around the world.
The Power Franchise

Programmable Active Droop

Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18