Agilent AN 154S-Parameter Design
Application Note
2
The need for new high-frequency, solid-state circuitdesign techniques has been recognized both by micro-wave engineers and circuit designers. These engi-neers are being asked to design solid state circuitsthat will operate at higher and higher frequencies.The development of microwave transistors and Agilent Technologies’ network analysis instrumen-tation systems that permit complete network char-acterization in the microwave frequency rangehave greatly assisted these engineers in their work.The Agilent Microwave Division’s lab staff hasdeveloped a high frequency circuit design seminarto assist their counterparts in R&D labs through-out the world. This seminar has been presentedin a number of locations in the United States andEurope.From the experience gained in presenting this orig-inal seminar, we have developed a four-part videotape,
S-Parameter Design Seminar.
While the tech-nology of high frequency circuit design is everchanging, the concepts upon which this technologyhas been built are relatively invariant.The content of the
S-Parameter Design Seminar
isas follows:
A.S-Parameter Design Techniques–Part I
(Part No. 90i030A586, VHS; 90030D586,
3
/
4
”)1.
Basic Microwave Review–Part I
This portion of the seminar contains a review of:a.Transmission line theoryb.S-parametersc.The Smith Chartd.The frequency response of RL-RC-RLCcircuits2.
Basic Microwave Review–Part II
This portion extends the basic concepts to:a.Scattering-Transfer or T-parametersb.Signal flow graphsc.Voltage and power gain relationshipsd.Stability considerations
B.S-Parameter Design Techniques Part II
(Part No. 90030A600, VHS; 90030D600,
3
/
4
”)1.
S-Parameter Measurements
In this portion, the characteristics of microwave transistors and the network ana-lyzer instrumentation system used to meas-ure these characteristics are explained.2.
High Frequency Amplifier Design
The theory of Constant Gain and ConstantNoise Figure Circles is developed in this por-tion of the seminar. This theory is thenapplied in the design of three actual amplifiercircuits.The style of this application note is somewhatinformal since it is a verbatim transcript of these video tape programs.Much of the material contained in the seminar,and in this application note, has been developedin greater detail in standard electrical engineeringtextbooks, or in other Agilent application notes.The value of this application note rests in itsbringing together the high frequency circuit designconcepts used today in R&D labs throughout theworld.We are confident that Application Note 154 andthe video taped
S-Parameter Design Seminar
willassist you as you continue to develop new high fre-quency circuit designs.
Introduction
3
Introduction
This first portion of Agilent Technologies’ S-Para-meter Design Seminar introduces some fundamen-tal concepts we will use in the analysis and designof high frequency networks.These concepts are most useful at those frequencieswhere distributed, rather than lumped, parametersmust be considered. We will discuss: (1) scatteringor S-parameters, (2) voltage and power gain rela-tionships, (3) stability criteria for two-port net-works in terms of these S-parameters; and we willreview (4) the Smith Chart.
Network Characterization
S-parameters are basically a means for characteriz-ing n-port networks. By reviewing some traditionalnetwork analysis methods we’ll understand why anadditional method of network characterization isnecessary at higher frequencies.
Figure 1
A two-port device (Fig. 1) can be described by anumber of parameter sets. We’re all familiar withthe H-, Y-, and Z-parameter sets (Fig. 2). All of thesenetwork parameters relate total voltages and totalcurrents at each of the two ports. These are thenetwork variables.
Figure 2
The only difference in the parameter sets is thechoice of independent and dependent variables.The parameters are the constants used to relatethese variables.To see how parameter sets of this type can bedetermined through measurement, let’s focus onthe H-parameters. H
11
is determined by setting V
2
equal to zero—applying a short circuit to the outputport of the network. H
11
is then the ratio of V
1
toI
1
—the input impedance of the resulting network.H
12
is determined by measuring the ratio of V
1
to V
2
—the reverse voltage gain-with the input portopen circuited (Fig. 3). The important thing to notehere is that both open and short circuits are essen-tial for making these measurements.
Figure 3
Moving to higher and higher frequencies, someproblems arise:1. Equipment is not readily available to measuretotal voltage and total current at the ports of thenetwork.2. Short and open circuits are difficult to achieveover a broad band of frequencies.3. Active devices, such as transistors and tunneldiodes, very often will not be short or open circuitstable.Some method of characterization is necessary toovercome these problems. The logical variables touse at these frequencies are
traveling waves
ratherthan total voltages and currents.
Chapter 1. Basic Microwave Review I
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