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Electronics

Electronics

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Published by: E_AFA on Jan 19, 2010
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08/29/2010

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T
HE
H
ASHEMITE
U
NIVERSITY
Computer and Electrical Engineering DepartmentElectronics 1 Laboratory (404232)
Session Day: THU. (2.00-5.00)ReportExperiment Name: Common Emitter and CommonCollector AmplifiersExperiment Date: 29-11-2007Instructors' Name:-Dr. Jalel Chebil-Eng. Fadi.Student's Name: Adnan Fahim Mousa Awwad.Student's ID: 532534
 
The Common Emitter Amplifier:Objectives
:After performing this experiment you should be able to:
Determine the voltage gain of a CE amplifier.
Determine the input impedance of a CE amplifier.
Determine AC resistance of the emitter re for a CE amplifier.
Explain the role of coupling and bypass capacitors in a CE amplifier.
Demonstrate the effect that a load has on the voltage gain of a CE amplifier.
Equipments
:
Variable DC power supply.
Breadboard.
Resistors.
2N3904 NPN Transistor.
Dual-trace oscilloscope.
Capacitors.
Potentiometer.
Theory
:In a CE amplifier the input signal is applied between the base and the emitter, theoutput voltage is developed between the collector and emitter and the transistor emitter is common to both the input and output circuit. It is the most common BJTamplifier configuration and has the following characteristics:1.High voltage gain.2.High current gain.3.Moderate input resistance.4.Moderate output resistance.5.180
o
voltage phase shift between the input and output waveforms.To make any transistor circuit amplify AC signals the B-E junction must be forward biased and the B-C junction must be reversed biased, for this there are several ways toapply DC bias, the simplest method is called the base bias or fixed bias but it isfrequently unsatisfactory. Base bias is recognized by a single resistor connected fromVcc to the transistor base. A much more widely used bias circuit is called voltagedivider bias, it is not as sensitive as the base bias method to the transistor variationsand temperature changes.To analyze any amplifier start with the DC parameters then the AC parameters for theamplifier can be analyzed.In the figure below, the equivalent circuit for the NPN transistor is shown (for ACmeasurements):
Figure 1: AC equivalent circuit of NPN transistor 
 
Procedure
:
Part 1: DC Measurements:
1.Measure and record the values of the resistors.Parameter
1
2
c
E
Measure Value99K21.8K988182.Construct the amplifier shown in figure 2. The signal generator should beturned off. Measure and record the DC voltages listed in table 1.3.Using the measured resistances and the value of β determined in step 2compute the DC parameters listed in table 1 for the CE amplifier shown in figure2. Your measured and computed values should agree within 10%.DC ParameterComputed Value Measured Value%erroV
B
1.79V1.796V0.33V
E
1.091V1.098V0.64I
E
11.13mA11.2mA0.63V
C
5.93V5.99V1.18V
CE
4.839V4.88V0.84β215.97
Table 1: DC parameters of CE amplifier Figure 2: CE amplifier 
The Common Collector Amplifier:Objectives:
Computing and measuring the DC parameters of common collector amplifier.
Computing and measuring the AC parameters of CC amplifier including thevoltage gain, input resistances and power gain.
Testing the effect of different load resistors on the AC parameters of the CCamplifier.
Theory:
The common collector amplifier is the second most common BJT amplifier configuration. The CC amplifier (emitter-follower) has the input signal applied to the base and the output signal is taken from the emitter.

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