Simpliﬁed Model for Ballistic Current-VoltageCharacteristic in Cylindrical Nanowires
, Man-Fai Ng
, Wee Shing Koh
, Zuan Yi Leong
Institute of High Performance Computing Singapore, 138632
The ballistic regime gives the upper limit of an electron device performance.This paper proposes a fast and eﬃcient model for calculating the current-voltage characteristic of a cylindrical nanowire within the framework of theNon-equilibrium Green’s Function. Under certain assumptions, the calcula-tion is simpliﬁed to a one dimensional problem and the modes due to theradial conﬁnement are given by an analytical equation. We further derivean analytical expression for the current-voltage characteristic at tempera-ture approaching zero Kelvin. The relationship between the radius of thenanowire and the electrical current is clearly shown in this expression. Theeﬀects of the radius on the current-voltage characteristic curve are also stud-ied. Furthermore, we plot the trend of the saturation current as the radiusis increased as predicted by both the numerical result and our analyticalmodel. Our proposed model can be further used to include electron-photoninteraction in the calculation of nanoscale optoelectronic devices.
Semiconducting nanowires are among the most promising alternatives forfuture nanoelectronics and optoelectronics [1, 2]. The diameter of fabricatednanowires is controlled by the size of the catalyst, and the length is propor-tional to growth time. Moreover, speciﬁc dopants can be incorporated into
Preprint submitted to Microelectronics Journal January 26, 2010