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Effect of Various Material Parameters on the Calculated Velocity-field Relation in Al0.2Ga0.8N at Room Temperature

Effect of Various Material Parameters on the Calculated Velocity-field Relation in Al0.2Ga0.8N at Room Temperature

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Published by Iis Yulia
Journal of Theoretical and Computational Studies - Effect of Various Material Parameters on the Calculated
Velocity-field Relation in Al0.2Ga0.8N at Room Temperature
Journal of Theoretical and Computational Studies - Effect of Various Material Parameters on the Calculated
Velocity-field Relation in Al0.2Ga0.8N at Room Temperature

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Published by: Iis Yulia on Jan 28, 2010
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Volume 8 Number 0104 ISSN 1979-3898
Journal of 
Theoretical and ComputationalStudies
Effect of Various Material Parameters on the CalculatedVelocity-field Relation in Al
0
.
2
Ga
0
.
8
N at Room Temperature
H. Arabshahi and A. Farzaneh 
J. Theor. Comput. Stud.
8
(2009) 0104Received: March 3
rd
, 2009; Accepted for publication: March 21
st
, 2009
Published by 
Indonesian Theoretical Physicist Group Indonesian Computational Society
http://www.opi.lipi.go.id/situs/gfti/ http://www.opi.lipi.go.id/situs/mki/
 
Journal of Theoretical and Computational Studies
Journal devoted to theoretical study, computational science and its cross-disciplinary studies 
URL :
http://www.jurnal.lipi.go.id/situs/jtcs/
Editors
A. Purwanto (ITS) J.M. Tuwankotta (ITB)A. S. Nugroho (BPPT) L.T. Handoko (LIPI)A. Sopaheluwakan (LabMath) M. Nurhuda (UNIBRAW)A. Sulaksono (UI) M. Sadly (BPPT)B. E. Gunara (ITB) M. Satriawan (UGM)B. Tambunan (BPPT) P. Nurwantoro (UGM)F.P. Zen (ITB) P. W. Premadi (ITB)H. Alatas (IPB) R.K. Lestari (ITB)I.A. Dharmawan (UNPAD) T. Mart (UI)I. Fachrudin (UI) Y. Susilowati (LIPI)Z. Su’ud (ITB)
Honorary Editors
B.S. Brotosiswojo (ITB) M.O. Tjia (ITB)M. Barmawi (ITB) P. Anggraita (BATAN)M.S. Ardisasmita (BATAN) T.H. Liong (ITB)
Guest Editors
H. Zainuddin (UPM) K. Yamamoto (Hiroshima)T. Morozumi (Hiroshima)
Coverage area
1.
Theoretical study 
: employing mathematical models and abstractions of a particular field in an attempt to explain known orpredicted phenomenon. E.g. : theoretical physics, mathematical physics, biomatter modeling, etc.2.
Computational science 
: constructing mathematical models, numerical solution techniques and using computers to analyzeand solve natural science, social science and engineering problems. E.g. : numerical simulations, model fitting and dataanalysis, optimization, etc.3.
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1.
Regular 
: an article contains an original work.2.
Comment
: an article responding to another one which has been published before.3.
Review 
: an article which is a compilation of recent knowledges in a particular topic. This type of article is only by invitation.4.
Proceedings
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Paper Submission
The submitted paper should be written in English using the L
A
TEX template provided in the web. All communication thereaftershould be done only through the online submission page of each paper.
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All submitted papers are subject to a refereeing process by an appropriate referee. The editor has an absolute right to make thefinal decision on the paper.
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Electronic reprints including covers for each article and content pages of the volume are available from the journal site for free.
Indonesian Theoretical Physicist Group Indonesian Computational Society
Secretariat Office :
c/o Group for Theoretical and Computational Physics, Research Center for Physics -LIPI, Kompleks Puspiptek Serpong, Tangerang 15310, Indonesia
http://www.opi.lipi.go.id/situs/gfti/ http://www.opi.lipi.go.id/situs/mki/
c
2009 GFTI & MKI
ISSN 1979-3898
 
J. Theor. Comput. Stud. Volume
8
(2009) 0104
Effect of Various Material Parameters on the Calculated Velocity-fieldRelation in Al
0
.
2
Ga
0
.
8
N at Room Temperature
H. Arabshahi
a
, A. Farzaneh
ba)
Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran 
b)
Department of Physics, Tarbiat Moallem University of Sabzevar, Iran 
Abstract :
The results of an ensemble Monte Carlo simulation of the steady-state electron drift velocity as a functionof applied electric field in Al
0
.
2
Ga
0
.
8
N are presented. The effect of various material parameters on the calculated velocityis assessed by varying each parameter independently by
±
30%. It is found that both the optical phonon energy andintervalley separation energy alter the peak electron velocity. Variations in the dielectric constants and central valleyeffective mass have more effect upon the peak drift velocity and act to alter the threshold electric field. The combinedeffects of a greater central valley effective mass and a larger phonon energy in Al
0
.
2
Ga
0
.
8
N result in a greater thresholdfield.
Keywords :
ensemble Monte Carlo, drift velocity, threshold electric field, effective mass
E-mail :
arabshahi@um.ac.ir
Received: March 3
rd
, 2009; Accepted for publication: March 21
st
, 2009
1 INTRODUCTION
In recent years, nearly all electronic and optoelec-tronic devices have been realized using alloys of III-Vmaterials, like group III-nitrides, GaN, AlN, and InN[1-4]. While GaN has been extensively studied [5-6],AlGaN and InGaN have yet to examined to the sameextent. It is considered reasonably well establishedthat the electron drift velocity dependence on electricfield in group III-nitrides have a region of negative dif-ferential (NDR) conductivity. The mechanism whichprovides for bulk negative differential resistance is afield induced hot electron transfer from a low energy,high mobility conduction band minimum to a higherenergy, low mobility satellite valley. In addition, toobserve NDR in bulk semiconductors, a well-definedthreshold field as well as a sufficiently large intervalleyseparation energy must exist.Different separation energies are predicted to givedifferent NDR characteristics, thus providing a degreeof engineering freedom in the design of real-space mi-crowave osillators. The experimental determinationof the peak electron velocity in a device which ex-hibits NDR is difficult since dipole domain formationdisturbs the uniform carrier concentration needed todetermine the carrier velocities.Consequently much of the information available onthe peak electron velocity and threshold field is ob-tained using theoretical methos. Semiconductor de-vice modeling includes a wide range of areas in solidstate physics, applied and computational mathemat-ics. Transport of carriers in semiconductors under ap-plied electric field was first explained as a combinationof drift due to the field, and diffusion due to concen-tration gradients. In the presence of high fields thatchange rapidly over small distances, the drift-diffusionequations, however, lose thier validity and non-localand hot-carrier effects begin to dominate device per-formance. In effect, apart from carrier density andvelocity, carrier energy (or equivalently, temperature)needs to be considered because the carriers are not inthermal equlibrium with the lattice. In GaN mate-rial which is used for high-speed device design, inertiaeffects play an important role since the impulse andenergy relaxation times of the electron gas are close tothe picosecond range. The most elaborate and practi-cable approach for the description of charge transportin semiconductors used for device simulation wouldbe the Monte Carlo method [5,6]. The advantage of this technique is a complete picture of carrier dynam-ics with reference to microscopic material parameters,e.g. effective masses and scattering parameters. Any-way the method must be still considered as very con-suming and hence not economical to be used by devicec
2009 GFTI & MKI
0104-1

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