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Volume 8 Number 0104 ISSN 1979-3898
Journal of 
Theoretical and ComputationalStudies
Effect of Various Material Parameters on the CalculatedVelocity-field Relation in Al
0
.
2
Ga
0
.
8
N at Room Temperature
H. Arabshahi and A. Farzaneh 
J. Theor. Comput. Stud.
8
(2009) 0104Received: March 3
rd
, 2009; Accepted for publication: March 21
st
, 2009
Published by 
Indonesian Theoretical Physicist Group Indonesian Computational Society
http://www.opi.lipi.go.id/situs/gfti/ http://www.opi.lipi.go.id/situs/mki/
 
Journal of Theoretical and Computational Studies
Journal devoted to theoretical study, computational science and its cross-disciplinary studies 
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http://www.jurnal.lipi.go.id/situs/jtcs/
Editors
A. Purwanto (ITS) J.M. Tuwankotta (ITB)A. S. Nugroho (BPPT) L.T. Handoko (LIPI)A. Sopaheluwakan (LabMath) M. Nurhuda (UNIBRAW)A. Sulaksono (UI) M. Sadly (BPPT)B. E. Gunara (ITB) M. Satriawan (UGM)B. Tambunan (BPPT) P. Nurwantoro (UGM)F.P. Zen (ITB) P. W. Premadi (ITB)H. Alatas (IPB) R.K. Lestari (ITB)I.A. Dharmawan (UNPAD) T. Mart (UI)I. Fachrudin (UI) Y. Susilowati (LIPI)Z. Su’ud (ITB)
Honorary Editors
B.S. Brotosiswojo (ITB) M.O. Tjia (ITB)M. Barmawi (ITB) P. Anggraita (BATAN)M.S. Ardisasmita (BATAN) T.H. Liong (ITB)
Guest Editors
H. Zainuddin (UPM) K. Yamamoto (Hiroshima)T. Morozumi (Hiroshima)
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1.
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A
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c
⃝
2009 GFTI & MKI
ISSN 1979-3898
 
J. Theor. Comput. Stud. Volume
8
(2009) 0104
Effect of Various Material Parameters on the Calculated Velocity-fieldRelation in Al
0
.
2
Ga
0
.
8
N at Room Temperature
H. Arabshahi
a
, A. Farzaneh
ba)
Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran 
b)
Department of Physics, Tarbiat Moallem University of Sabzevar, Iran 
Abstract :
The results of an ensemble Monte Carlo simulation of the steady-state electron drift velocity as a functionof applied electric field in Al
0
.
2
Ga
0
.
8
N are presented. The effect of various material parameters on the calculated velocityis assessed by varying each parameter independently by
±
30%. It is found that both the optical phonon energy andintervalley separation energy alter the peak electron velocity. Variations in the dielectric constants and central valleyeffective mass have more effect upon the peak drift velocity and act to alter the threshold electric field. The combinedeffects of a greater central valley effective mass and a larger phonon energy in Al
0
.
2
Ga
0
.
8
N result in a greater thresholdfield.
Keywords :
ensemble Monte Carlo, drift velocity, threshold electric field, effective mass
E-mail :
arabshahi@um.ac.ir
Received: March 3
rd
, 2009; Accepted for publication: March 21
st
, 2009
1 INTRODUCTION
In recent years, nearly all electronic and optoelec-tronic devices have been realized using alloys of III-Vmaterials, like group III-nitrides, GaN, AlN, and InN[1-4]. While GaN has been extensively studied [5-6],AlGaN and InGaN have yet to examined to the sameextent. It is considered reasonably well establishedthat the electron drift velocity dependence on electricfield in group III-nitrides have a region of negative dif-ferential (NDR) conductivity. The mechanism whichprovides for bulk negative differential resistance is afield induced hot electron transfer from a low energy,high mobility conduction band minimum to a higherenergy, low mobility satellite valley. In addition, toobserve NDR in bulk semiconductors, a well-definedthreshold field as well as a sufficiently large intervalleyseparation energy must exist.Different separation energies are predicted to givedifferent NDR characteristics, thus providing a degreeof engineering freedom in the design of real-space mi-crowave osillators. The experimental determinationof the peak electron velocity in a device which ex-hibits NDR is difficult since dipole domain formationdisturbs the uniform carrier concentration needed todetermine the carrier velocities.Consequently much of the information available onthe peak electron velocity and threshold field is ob-tained using theoretical methos. Semiconductor de-vice modeling includes a wide range of areas in solidstate physics, applied and computational mathemat-ics. Transport of carriers in semiconductors under ap-plied electric field was first explained as a combinationof drift due to the field, and diffusion due to concen-tration gradients. In the presence of high fields thatchange rapidly over small distances, the drift-diffusionequations, however, lose thier validity and non-localand hot-carrier effects begin to dominate device per-formance. In effect, apart from carrier density andvelocity, carrier energy (or equivalently, temperature)needs to be considered because the carriers are not inthermal equlibrium with the lattice. In GaN mate-rial which is used for high-speed device design, inertiaeffects play an important role since the impulse andenergy relaxation times of the electron gas are close tothe picosecond range. The most elaborate and practi-cable approach for the description of charge transportin semiconductors used for device simulation wouldbe the Monte Carlo method [5,6]. The advantage of this technique is a complete picture of carrier dynam-ics with reference to microscopic material parameters,e.g. effective masses and scattering parameters. Any-way the method must be still considered as very con-suming and hence not economical to be used by devicec
⃝
2009 GFTI & MKI
0104-1
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