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2N4427

2N4427

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Published by: tirucatalin on Mar 22, 2010
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10/23/2012

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DATA SHEET
 
Product specificationSupersedes data of August 1986File under Discrete Semiconductors, SC08a1995Oct27
DISCRETE SEMICONDUCTORS 
2N3866; 2N4427
Silicon planar epitaxialoverlay transistors
 
1995Oct272
Philips Semiconductors Product specication
Silicon planar epitaxialoverlay transistors2N3866; 2N4427
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with thecollector connected to the case. The devices are primarilyintended for class-A, B or C amplifiers, frequency multiplierand oscillator circuits.
APPLICATIONS
The transistors are intended for use in output, driver orpre-driver stages in VHF and UHF equipment.
PINNING - TO-39/1PIN DESCRIPTION
1emitter2base3collectorFig.1 Simplified outline.
handbook, halfpage 
MBB199 
123
QUICK REFERENCE DATARF performanceSYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CER
collector-emitter voltageR
BE
=10
2N3866
55V2N4427
40VV
CEO
collector-emitter voltageopen base2N3866
30V2N4427
20VV
EBO
emitter-base voltageopen collector2N3866
3.5V2N4427
2.0VI
C
collector current (DC)
0.4AI
C(AV)
average collector currentmeasured over any 20msperiod
0.4AP
tot
total power dissipationup to T
mb
=25
°
C
3.5Wf
T
transition frequencyI
C
=50mA; V
CE
=15V;f=200MHz500
MHzT
 j
 junction temperature
200
°
C
TYPE NUMBERf(MHz)V
CE
(V)P
o
(W)G
p
(dB)
η
(%)
2N3866400281>10>452N4427175121>10>50
 
1995Oct273Philips SemiconductorsProduct specication
Silicon planar epitaxialoverlay transistors2N3866; 2N4427
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltageopen emitter2N3866
55V2N4427
40VV
CER
collector-emitter voltageR
BE
=10
2N3866
55V2N4427
40VV
CEO
collector-emitter voltageopen base2N3866
30V2N4427
20VV
EBO
emitter-base voltageopen collector2N3866
3.5V2N4427
2.0VI
C
collector current (DC)
0.4AI
C(AV)
average collector currentmeasured over any 20msperiod
0.4AI
CM
collector current peak value
0.4AP
tot
total power dissipationup to T
mb
=25
°
C
3.5WT
stg
storage temperature
65+200
°
CT
 j
 junction temperature
200
°
C
THERMAL CHARACTERISTICSNotes
1.Mounted with top clamping washer 56218.2.Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junctionto ambient in free air200K/WR
th j-mb
thermal resistance from junctionto mounting base50K/WR
th mb-h
thermal resistance frommounting base to heatsinknote11.0K/Wnote22.5K/W

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