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D.Kanjilal
Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110 067
Ion beams at varied energies and fluences have been used to synthesize controlled structures in
materials on or near surface region as well as deep inside the materials as per requirements. In this talk
some of the principal features of controlled synthesis of these materials at desired location and depth
will be reviewed. Special emphasis will be given on fundamental interaction processes involved and
detailed experimental techniques needed for engineering properties of materials. A few results of new
initiatives on production of various structures by energetic ion beams having energies varying from kilo
electron volts (keV) to mega electron volts (MeV) will be discussed. Low energy (keV) ion beam is
generally used for implantation of the desired species having required concentration at predetermined
location. High energy (MeV) ions are mostly used to induce controlled formation of requird phase due
to dense electronic excitation during irradiation. Present understanding of the physical process involved
and recent results on controlled formation of different nanostructures will be reviewed in this talk.