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1n4148(2)

1n4148(2)

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Published by arunan55
data sheet
data sheet

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Published by: arunan55 on Jul 29, 2010
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10/25/2012

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1N4148
Vishay Semiconductors
formerly General Semiconductor
Document Number 88100www.vishay.com07-May-021
Small-Signal Diode
Reverse Voltage
100V
Forward Current
150mA
DO-204AH (DO-35 Glass)
Features
• Silicon Epitaxial Planar Diode• Fast switching diode.This diode is also available in other case stylesincluding the SOD-123 case with the typedesignation 1N4148W,the MiniMELFcase with thetype designation LL4148, the SOT-23 case with thetype designation IMBD4148, and the DO-34 casewith type designation 1N4148S.
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx.0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm tape), 50K/boxF3/10K per 13
reel (52mm tape), 50K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
A
= 25
°
C unless otherwise noted)
ParameterSymbolLimitUnit
Reverse VoltageV
R
75VPeak Reverse VoltageV
RM
100VAverage Rectified CurrentI
F(AV)
150
1)
mAHalf Wave Rectification with Resistive Load at T
amb
= 25
°
CSurge Forward Current at t < 1s and Tj = 25
°
CI
FSM
500mAPower Dissipation at T
amb
= 25
°
C
(1)
P
tot
500mWThermal Resistance Junction to Ambient Air
(1)
R
θ
JA
350
°
C/WJunction TemperatureT
 j
175
°
CStorage TemperatureT
S
 – 
65 to +175
°
C
Note:
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
 
1N4148
Vishay Semiconductors
formerly General Semiconductor
www.vishay.comDocument Number 88100207-May-02
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
ParameterSymbolTest ConditionMinTyp MaxUnit
Reverse Breakdown VoltageV
(BR)R
I
R
= 100
µ
A100VForward VoltageV
F
I
F
= 10mA
 —
1.0VLeakage CurrentI
R
V
R
= 20V
 —
25nAV
R
= 75V
 —
5
µ
AV
R
= 20V, T
J
= 150
°
C
 —
50
µ
ACapacitanceC
tot
V
F
= V
R
= 0V
 —
4pFVoltage Rise when Switching ONV
fr
t
p
= 0.1
µ
s,Rise time<30ns
 —
2.5ns
(tested with 50mA Pulses)
f
p
= 5 to 100kHzReverse Recovery Time t
rr
I
F
= 10mA, I
R =
1mA,
 —
4nsV
R
= 6V , R
L
= 100
Rectification Efficiency
η
 ν
f = 100MHz, V
RF
= 2V0.45
 
Rectification Efficiency Measurement Circuit
 
1N4148
Vishay Semiconductors
formerly General Semiconductor
Document Number 88100www.vishay.com07-May-023
Ratings andCharacteristic Curves
(T
A
= 25
°
C unless otherwise noted)

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/*********** DO NOT ALTER ANYTHING BELOW THIS LINE ! ************/ var s_code=s.t();if(s_code)document.write(s_code)//-->