To plot the characteristics of Si diode and calculate its forward static and dynamicresistance.
-Voltmeter ( 0-15 V), Milliameter ( 0-25 mA ), Microammeter ( 0-5 µA), Patch cords.Supply voltage Vi = +12 V, R = 1K, D1 & D2 = Silicon type (1 N 4007 ).
Forward condition of a P-N junction :A P-N junction diode conducts in the forward direction that is when anode is connectedto the positive of supply voltage VAA and cathode to negative of supply voltage VAA Fig.1 Diode in forward bias conditionAbove fig(1) shows the forward connection of diode. where VAA is forward voltageapplied. I = IF is the forward current flows through diode and V is the voltage dropacross the diode. With the forward bias, the barrier potential at the junction reduces &majority carriers diffuse across the junction. This results in forward current throughdiode. The amount of this forward bias VAA can be varied by changing a potentiometer and series resistor ‘R’ decides the max. Forward current flow through diode.Reverse condition of a P-N junction :- No flow electrons and hence no flow of electric current is possible in the reverse biasedcondition fig.(2) shows the reverse bias connection of the diode. Fig.2 Diode in reverse bias condition