Three generations of a wide-band LowNoise Amplifier (LNA)are designed in a 0.35 p.mBiCMOSechnology. The opology chosen is a noise-canceling topologywith shunt resistive feedback orwide-band matching to 50 D_. The second generation design was fabricated and measured. It had ameasured gain of 17 dB and a bandwidth of 2.6 GHz. Its Noise Figure is below 3 dB over the LNAbandwidth, with minimumalue of 2.4 dB. It draws 13mA urrent from a 2.5 V supply. This LNA as anexcellent figure of merit
BW)/(NF x PDC)
comparedo the other wide-bandLNAs.Basedon the experience gained from the first two design generations, a synthesis-based designstrategy is developed.A hird generation LNAs synthesizedusing this strategy. It optimizesbetween he
various noise sources affecting NFwith the other parameters nvolved in the FOM,eading to a LNAhat
outperforms arlier designs by about 2x.