A Wide-Band Low NoiseAmplifier SynthesisMethodologyAbhishek Jajoo2005
Advisor: l~rof. Mukherjee
A Wide-Band Low Noise Amplifier SynthesisMethodology
by
ABHISHEK JAJOOA
hesis submitted n partial fulfillment of the requirementsfor thedegree ofMaster of ScienceAugust 2005Departmentof Electrical & ComputerEngineeringCarnegie Mellon UniversityPittsburgh, Pennsylvania, USAAdvisor: Dr. Tamal MukherjeeSecond Reader: Professor C. Patrick Yue
Abstract
Three generations of a wide-band LowNoise Amplifier (LNA)are designed in a 0.35 p.mBiCMOSechnology. The opology chosen is a noise-canceling topologywith shunt resistive feedback orwide-band matching to 50 D_. The second generation design was fabricated and measured. It had ameasured gain of 17 dB and a bandwidth of 2.6 GHz. Its Noise Figure is below 3 dB over the LNAbandwidth, with minimumalue of 2.4 dB. It draws 13mA urrent from a 2.5 V supply. This LNA as anexcellent figure of merit
FOM
($2| x
BW)/(NF x PDC)
comparedo the other wide-bandLNAs.Basedon the experience gained from the first two design generations, a synthesis-based designstrategy is developed.A hird generation LNAs synthesizedusing this strategy. It optimizesbetween he
various noise sources affecting NFwith the other parameters nvolved in the FOM,eading to a LNAhat
outperforms arlier designs by about 2x.
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