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2N1711

2N1711

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Published by Ikram Ikram

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Published by: Ikram Ikram on Oct 04, 2010
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DATA SHEET
Product specificationSupersedes data of September1994File under Discrete Semiconductors, SC041997May28
DISCRETE SEMICONDUCTORS 
2N1711
NPN medium power transistor
ook, halfpage 
M3D111
 
1997May282
Philips Semiconductors Product specication
NPN medium power transistor 2N1711
FEATURES
High current (max. 500mA)
Low voltage (max. 50V).
APPLICATIONS
DC and wideband amplifiers.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNINGPIN DESCRIPTION
1emitter2base3collector, connected to caseFig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage 
312
MAM317 
123
QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltageopen emitter
75VV
CEO
collector-emitter voltageopen base
50VI
CM
peak collector current
1AP
tot
total power dissipationT
amb
25
°
C
0.8Wh
FE
DC current gainI
C
=150mA; V
CE
=10V100300f
T
transition frequencyI
C
=50mA; V
CE
=10V; f=100MHz70
MHz
 
1997May283Philips SemiconductorsProduct specication
NPN medium power transistor2N1711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC134).
THERMAL CHARACTERISTICSCHARACTERISTICS
T
amb
=25
°
C unless otherwise specified.
Note
1.Pulse test: t
p
300
µ
s;
δ
0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltageopen emitter
75VV
CEO
collector-emitter voltageopen base
50VV
EBO
emitter-base voltageopen collector
7VI
C
collector current (DC)
500mAI
CM
peak collector current
1AI
BM
peak base current
200mAP
tot
total power dissipationT
amb
25
°
C
0.8WT
case
100
°
C
1.7WT
case
25
°
C
3WT
stg
storage temperature
65+150
°
CT
 j
 junction temperature
200
°
CT
amb
operating ambient temperature
65+150
°
C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
thj-a
thermal resistance from junction to ambientin free air219K/WR
thj-c
thermal resistance from junction to case58.3K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off currentI
E
=0; V
CB
=60V
10nAI
E
=0; V
CB
=60V; T
amb
=150
°
C
10
µ
AI
EBO
emitter cut-off currentI
C
=0; V
EB
=5V
5nAh
FE
DC current gainI
C
=10
µ
A; V
CE
=10V20
I
C
=0.1mA; V
CE
=10V35
I
C
=10mA; V
CE
=10V; note175
I
C
=10mA; V
CE
=10V; T
amb
=
55
°
C35
I
C
=150mA; V
CE
=10V; note1100300I
C
=500mA; V
CE
=10V; note140
V
CEsat
collector-emitter saturation voltageI
C
=150mA; I
B
=15mA; note1
500mVV
BEsat
base-emitter saturation voltageI
C
=150mA; I
B
=15mA; note1
1.3Vf
T
transition frequencyI
C
=50mA; V
CE
=10V; f=100MHz70
MHzC
c
collector capacitanceI
E
=i
e
=0; V
CB
=10V; f=1MHz
25pFC
e
emitter capacitanceI
C
=i
c
=0; V
EB
=0.5V; f=1MHz
80pF

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