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203769

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Active
and
Pasalve
Elec.
Comp.,
2001,
Vol.
23,
pp.
175-183
O
2001
OPA
(Overseas
Pubtishers
Auociaflon)
N.V.
Reprints
available
directly
from
thepublisherPublished
by
license
under
Photocopyingpermitted
by
license
only
the
Gordon
and
Bresch
Science
Publishers
imprint.
EXTRACTION
OF
Ri s(or
OF
n-CHANNEL
POWER
MOSFETBY
NUMERICAL
SIMULATION
MODEL
C.-T.
SALAME*
Radiation
Technology,
Interfaculty
Reactor
Institute,
Delft
University
of
Technology,
Mekelweg
15,
2629
JB
Delft,
The
Netherlands
(Received
4
September
2000;
In
final
form
13
September
2000)
In
this
paper
we
present
an
original
method
for
n-channel
power
MOSFET
resistance
extraction
in
theoperation
mode
(RDso).
The
IDs
f(VDs)
electrical
characteristics
measurements
forthe
transistor
and
the
Body-Drain
junctionare
realized
for
the
experimentaldetermination
and
the
extraction
(by
numerical
analysis)
of
RDSO,
respectively.
Valuesof
this
resistance
areextracted
for
different
positivebias
appliedbetween
the
gate
and
the
source
(+Vos).
Physicals
parameters
obtained
from
the
numerical
analysis
are
inspected,
and
results
shows
that
thenumericallyanalysed
junction
characteristic
is
in
very
good
correlation
withthe
electrical
measurement
Keywords:
Power
MOSFET;
RDs(o;
Numerical
simulation;Physicals
parameters
1.
INTRODUCTION
VDMOSFET
operation
(MOSFET
with
Vertical
Diffusion)
are
mainly
controlled
by
the
gate
voltage
consistsin
modulating
the
channel
conductivity
resulting
from
the
inversion
layer
created
on
the
SiO2_Si
interface
[1-4].
For
the
n-channel
power
MOSFETs
devices,
When
a
positive
bias
is
applied
to
the
gate
with
respect
to
the
source
(+
VGs),
an
electric
field
appears,
created
acrossthe
gateoxideregion
and
into
the
Si
surface
region
immediately
below
thegate
region
(Fig.
1).
If
thegate
bias
is
sufficiently
large
and
positive
(for
the
n-channel
operation),
the
*Tel.:
+
31
15
2783776,
Fax:
+
31
15
278
6442,
e-mail:
salame@ieee.org
175
 
176
C.-T.
SALAME
+
Vs
(+)
Drain
direct
diode
Current
FIGURE
Cross-section
for
n-channel
Power
MOSFET
structure.
majority
carriers
(holes
in
the
p-body)
are
depleted
in
this
surfaceregion,
and
the
minority
carriers
(electrons)
are
attracted
to
this
region
(for
Vs
_>
Vth)[5-8].
Thus,
when
apotential
is
applied
between
thedrain
and
the
source
contacts
(n+-doped
regions
in
Fig.
1),
the
inversion
layer
provides
a
low
resistance
current
channel
easing
theelectrons
flow
from
the
source
to
the
drain.
The
device
is
then
said
to
beturned
on,
and
thecontrol
gate
bias
potential
at
which
the
channel
begins
to
conduct
appreciable
current,
is
calledthe
thresholdvoltage
(Vth)
of
the
device
[9-12].
Reducing
thegate
voltage
to
below
Vth
will
cause
the
MOSFET
to
turn
OFF.
Then
if
the
drain-source
bias
change
to
anegativevalues
(-VDS),
the
body-drain
junction
become
forward
biased
(The
source
is
positivelybiased
with
respect
to
the
drain)
and
a
direct
current
flows
through
thesource
cell
across
the
forward
p-n
junction
(see
Fig.
1)
results
in
minority
carriers
injection
into
the
substrate.
At
low
gatevoltage,a
transistor
reverse
current
can
flow
along
thesmall
inversion
layer
and
the
resulting
current
is,
generally,
the
sum
of
the
direct
diode
current
and
of
the
reverse
transistor
current
[13].
As
the
channel
switches
OFF,
for
a
null
gate
voltage,
the
resulting
current
consistsin
the
diode
current
only.
 
MOSFET
177
NUMERICAL
ANALYSIS
MODEL
FOR
JUNCTION
CHARAERISTIC
Current
(1)
and
voltage
(V)
values
of
two
hundred
points
of
ex-
perimenta
I-V
Junction
current,
are
computer-driven
via
adata
acquisition
board
and
stored
for
modelling
analysis.
The
description
of
the
I-V
characteristics
of
silicon
p-n
junctions
havebeen
thoroughly
developed
[14,
15].
The
related
implicit
Eq.
(1)
introduces
the
classical
parameters,
series
(R),
shunt
(Rh)
resistances,
the
ideality
factor
(A),
thereverse
diffusion
current
(Ion)
and
the
reverse
recombination
rrent
(I02).
(1)
The
electronic
diffusion-recombination
phenomena
in
thequasi-
neutral
region
of
the
junction
(reverse
current
10)
is
separated
from
the
surface
and
space-charge
region
recombination
phenomena
(reverse
current
Io2).
This
practice
is
recognized
through
its
imple-
mentation
in
theSpice
model
of
the
diode.
The
equivalent
electricalcircuit
forthe
junction
is
represented
in
Figure
2,
two
diodes
D1
and
D2
in
parallel
taking
into
account
the
diffusion
and
recombination
mechanisms
to
which
are
added
series
(R)
and
shunt
resistances
(Rh).
A
specially
conceived
software
[16],
PARADI,
extracts
the
FIGURE
2
Equivalent
electricalcircuit
for
a
junction
studied
by
a
model
with
two
exponential.

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