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1, JANUARY 2010
I. I NTRODUCTION
dφ α dX
+ = ηφ
Manuscript received October 9, 2009. First published December 1, 2009; dt w dt
current version published December 23, 2009.
1 dX dφ vs
X. Wang and Y. Chen are with Seagate Technology, Bloomington, MN 55435 −α = ω0 sin(2φ) + + ηX (2)
USA (e-mail: xiaobin.wang@ieee.org; yiran.chen@ieee.org). w dt dt w
Y. Gu is with the St. Cloud State University, St. Cloud, MN 56301 USA
(e-mail: guyingw@yahoo.com).
H. Li is with the Department of Electrical and Computer Engineering, where ω0 = γHp /2 (γ being the gyro-magnetic ratio), α is the
Polytechnic Institute of New York University, Brooklyn, NY 11201 USA (e- damping parameter, and vs = P JuB /eMs is the spin torque
mail: hli@poly.edu). excitation strength. P is the polarization efficiency, uB is the
Color versions of one or more of the figures in this letter are available online
at http://ieeexplore.ieee.org. Bohr magneton, and e is the elementary electron charge. ηφ (t)
Digital Object Identifier 10.1109/LED.2009.2035643 and ηX (t) are the φ and X component thermal fluctuation
Authorized licensed use limited to: Seagate Technology. Downloaded on January 9, 2010 at 21:38 from IEEE Xplore. Restrictions apply.
WANG et al.: SPINTRONIC MEMRISTOR TEMPERATURE SENSOR 21
Authorized licensed use limited to: Seagate Technology. Downloaded on January 9, 2010 at 21:38 from IEEE Xplore. Restrictions apply.
22 IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 1, JANUARY 2010
Authorized licensed use limited to: Seagate Technology. Downloaded on January 9, 2010 at 21:38 from IEEE Xplore. Restrictions apply.