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Published by b33g33
NXP RF manual
NXP RF manual

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Published by: b33g33 on Jan 31, 2011
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Application and design manualfor High Performance RF productsMay 2010
RF Manual 14
NXP Semiconductors RF Manual 14
NXP’s RF Manual makesdesign work much easier
High Performance RF for the most demanding applications
NXP’s RF Manual – one of the most important reference tools on the market fortoday’s RF designers – features our complete range of RF products, from low tohigh power signal conditioning & high speed data converters.
 What’s new?
This RF Manual features new applications, such as: point-to-point communication, radar, VSAT, MoCA(Multimedia over Coax Alliance), NIM (Network Interface Module for TV reception), Digital Satellite Set-top-boxRF (Plasma) lighting, medical imaging, microwave furnaces and Mobile platforms. And we describe thoroughly newdevelopments in our main technologies SiGe:C QUBiC and LDMOS.New products families have been added to our broad portfolio, like: Quad pin diodes, 6
and 7
generation SiGe:Cwideband transistors, variable gain amplifiers, LNA's for wireless infrastructures, LNA’s and MOSFETs for STB and afull line-up of high speed converters. And of course the latest additions and improvements are included: GPS LNA’s,medium power amplifiers, LO generators and CATV modules.Our base station offering has grown extensively by e.g. a comprehensive set of best in class Doherty amplifier designs,a broad selection of medium power, variable gain and low noise amplifiers and our JESD204A-compliant, high speedDACs and ADCs.Last but not least, we expanded our cross reference list with 40% to over 1.200 items.
A strong foundation in RF
Shipping billions of RF products annually, NXP is a true industry leader in high performance RF. Our RF small signalproducts are widely installed in satellites, cellular base stations, mobile devices, cars, TV tuners and CATV. We’re aleader in high power RF for cellular infrastructure, broadcast/ISM and Radar applications. With our new, serializedsignal processing architectures with JESD204A-compliant high-speed converters, we are enabling a transition to morecompact, higher performance systems.Our IP extends far beyond our packaged products to our patented high performance processes. From high-powerLDMOS for power amplifiers, CMOS processes for our high-speed converters, and the most advanced SiGe:C (QUBiC4)for RF small signal transistors, MMICs and ICs. Our in-house process and technology portfolio sets us apart.What’s more, producing over 65 million units per day, we control our front- and back-end manufacturing quality and coststructures with internal 8-inch IC fabs in the Netherlands and Singapore and assembly plants in Thailand, Taiwan andChina. Our processses are all AEC100 certified for supply into the most quality-conscious customers and applications.
NXP Semiconductors RF Manual 14
NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers1964 – First RF wideband transistor with 1.5 GHz max1970 – BFR90, a 5 GHz RF wideband transistor1978 – BFQ33, a 14 GHz RF wideband transistor1989 – Output matching in common emitter base station transistors1992 – Highest power broadcast bipolar devices1996 – Highest performance 2 GHz LDMOS2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers2006 – Fully integrated Doherty transistors2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN2008 – High speed data converters based on JESD204A standard2009 – 1kW single transistor(BLF578)power amplifier for FM radio (88 to 108 MHz)2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
“I’m proud to present the latest edition of our RF Manual. It covers NXP’s entire range of RF products in one comprehensive manual,and I’m convinced that you’ll find the 14
edition even more useful in your daily design work.”
 Kind regards,John Croteau
Sr. Vice President & General ManagerBusiness Line High Performance RF
RF Manual web page

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