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) Despite the ability of SEM to identify the grain structure of a solar cell, the area that it scans is relatively small for the entire solar cell. As constructing I-V curve data requires time for testing, a wafer must be scanned many times using SEM to cover the entire area. However, the conventional procedure to identify defective cells in a module is laborious and time consuming.
Therefore, this work describes an inspection system to identify defects in silicon-based solar cells, in particular unqualified cells, by locating them and calculating the percentage of the defective area immediately. The proposed system consists of near-infrared (NIR) image sensing electronic circuits and a data processing control computer in real time.