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4N25 Datasheet

4N25 Datasheet

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Published by Stavros Kalapothas
4N25 Vishay Specifications Datasheet
4N25 Vishay Specifications Datasheet

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Published by: Stavros Kalapothas on Apr 16, 2011
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Optocoupler, Phototransistor Output,with Base Connection
 www.vishay.comFor technical questions, contact: optocoupler.answers@vishay.comDocument Number: 83725132Rev. 1.6, 07-May-08
4N25/4N26/4N27/4N28
Vishay Semiconductors
DESCRIPTION
The 4N25 family is an industry standard single channelphototransistor coupler. This family includes the4N25/4N26/4N27/4N28. Each optocoupler consists ofgallium arsenide infrared LED and a silicon NPNphototransistor.These couplers are underwriters laboratories (UL) listed tocomply with a 5300 V
RMS
isolation test voltage. This isolationperformance is accomplished through special Vishaymanufacturing process.Compliance to DIN EN 60747-5-5 partial discharge isolationspecification is available by ordering option 1.These isolation processes and the Vishay ISO9001 qualityprogram results in the highest isolation performanceavailable for a commercial plastic phototransistoroptocoupler.The devices are also available in lead formed configurationsuitable for surface mounting and are available either ontape and reel, or in standard tube shipping containers.
Note
For additional design information see application note 45 normalized curves
FEATURES
Isolation test voltage 5300 V
RMS
Interfaces with common logic familiesInput-output coupling capacitance < 0.5 pFIndustry standard dual-in-line 6 pin packageLead (Pb)-free componentComponent in accordance to RoHS2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
AC mains detectionReed relay drivingSwitch mode power supply feedbackTelephone ring detectionLogic ground isolationLogic coupling with high frequency noise rejection
AGENCY APPROVALS
UL1577, file no. E76222 system code ADIN EN 60747-5-5 available with option 1
 
i179004
123654BCEAC
N
C
ORDER INFORMATION
PART REMARKS
4N25CTR > 20 %, DIP-64N26CTR > 20 %, DIP-64N27CTR > 10 %, DIP-64N28CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNITINPUT
Reverse voltageV
R
5VForward currentI
F
60mASurge currentt
10 µsI
FSM
3APower dissipationP
diss
100mW
OUTPUT
Collector emitter breakdown voltageV
CEO
70VEmitter base breakdown voltageV
EBO
7VCollector currentI
C
50mAt
1.0 msI
C
100mAPower dissipationP
diss
150mW
 
 Document Number: 83725For technical questions, contact: optocoupler.answers@vishay.comwww.vishay.comRev. 1.6, 07-May-08133
4N25/4N26/4N27/4N28
Optocoupler, Phototransistor Output,with Base Connection
Vishay Semiconductors
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is notimplied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximumratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for throughhole devices (DIP).
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineeringevaluation. Typical values are for information only and are not part of the testing requirements.
(2)
JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
 
COUPLER
Isolation test voltageV
ISO
5300V
RMS
Creepage distance
7.0mmClearance distance
7.0mmIsolation thickness between emitter anddetector
0.4mmComparative tracking indexDIN IEC 112/VDE 0303, part 1175Isolation resistanceV
IO
= 500 V, T
amb
= 25 °CR
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °CR
IO
10
11
Ω
Storage temperatureT
stg
- 55 to + 125°COperating temperatureT
amb
- 55 to + 100°CJunction temperatureT
 j
125°CSoldering temperature
(2)
max.10 s dip soldering:distance to seating plane
1.5 mmT
sld
260°C
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNITINPUT
Forward voltage
(2)
I
F
= 50 mAV
F
1.31.5VReverse current
(2)
V
R
= 3.0 VI
R
0.1100µACapacitanceV
R
= 0 VC
O
25pF
OUTPUT
Collector base breakdown voltage
(2)
I
C
= 100 µABV
CBO
70VCollector emitter breakdownvoltage
(2)
I
C
= 1.0 mABV
CEO
30VEmitter collector breakdown voltage
(2)
I
E
= 100 µABV
ECO
7VI
CEO
(dark)
(2)
V
CE
= 10 V, (base open)4N25550nA4N26550nA4N27550nA4N2810100nAI
CBO
(dark)
(2)
V
CB
= 10 V,(emitter open)2.020nACollector emitter capacitanceV
CE
= 0C
CE
6.0pF
COUPLER
Isolation test voltage
(2)
Peak, 60 HzV
IO
5300VSaturation voltage, collector emitterI
CE
= 2.0 mA, I
F
= 50 mAV
CE(sat)
0.5VResistance, input output
(2)
V
IO
= 500 VR
IO
100G
Ω
Capacitance, input outputf = 1 MHzC
IO
0.5pF
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
 
 www.vishay.comFor technical questions, contact: optocoupler.answers@vishay.comDocument Number: 83725134Rev. 1.6, 07-May-08
4N25/4N26/4N27/4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output,with Base Connection
Note
Indicates JEDEC registered values.
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 1 - Forward Voltage vs. Forward CurrentFig. 2 - Normalized Non-Saturated and Saturated CTR vs.LED CurrentFig. 3 - Normalized Non-Saturated and Saturated CTR vs.LED CurrentFig. 4 - Normalized Non-Saturated and Saturated CTR vs.LED Current
 
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
DC current transfer ratioV
CE
= 10 V, I
F
= 10 mA4N25CTR
DC
2050%4N26CTR
DC
2050%4N27CTR
DC
1030%4N28CTR
DC
1030%
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise and fall timesV
CE
= 10 V, I
F
= 10 mA, R
L
= 100
Ω
t
r
, t
f
2.0µs
i4n25_01
1001010.1 0.70.
8
0.91.01.11.21.31.4
I
F
- For
w
ard C
u
rrent (mA)
      V
   F
  -   F  o  r
    w
  a  r   d
      V
  o   l   t  a  g  e   (
      V
   )
T
A
= - 55 °CT
A
= 25 °CT
A
=
8
5 °C
i4n25_02
0.00.51.01.5010100
I
F
- LED C
u
rrent (mA)
N
CTR
N
CTR(SAT)
       N
   C   T   R  -
       N
  o  r  m  a   l   i  z  e   d   C   T   R
CTR
CE(sat)
= 0.4
VV
CE
= 10
V
, I
F
= 10 mA, T
A
= 25 °CT
A
= 25 °C
N
ormalized to:1
i4n25_03
1001010.1 0.00.51.01.5
I
F
- LED C
u
rrent (mA)
       N
   C   T   R
  -
       N
  o  r  m  a   l   i  z  e   d   C   T   R
CTR
CE(sat)
 
V
CE
= 0.4
VN
CTR
N
CTR(SAT)T
A
= 50 °C
N
ormalized to:
V
CE
= 10
V
, I
F
= 10 mA, T
A
= 25 °C
i4n25_04
1001010.1 0.00.51.01.5
I
F
- LED C
u
rrent (mA)
      N
   C   T   R  -
      N
  o  r  m  a   l   i  z  e   d   C   T   R
N
CTR
N
CTR(SAT)T
A
= 70 °C
N
ormalized to:CTR
CE(sat)
 
V
CE
= 0.4
VV
CE
= 10
V
, I
F
= 10 mA, T
A
= 25 °C

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