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Field Effect Transistor (FET)

Field Effect Transistor (FET)

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Published by RamanaButterfly
Field effect transistor is a three terminal semiconductor device. There are two types of such devices,
1. MOSFET (Metal Oxide semiconductor FET) and
2.JFET (Junction FET).
Field effect transistor is a three terminal semiconductor device. There are two types of such devices,
1. MOSFET (Metal Oxide semiconductor FET) and
2.JFET (Junction FET).

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Published by: RamanaButterfly on Jun 05, 2011
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10/16/2011

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Field Effect Transistor (FET) 
Butterfly
 s
Page 1
Field effect transistor (FET)
 
 
Field effect transistor is a three terminal semiconductor device. There are two typesof such devices,1.
 
MOSFET (Metal Oxide semiconductor FET) and2.
 
JFET (Junction FET).
Features of FET
 
An important feature of the FET is simpler to fabricate and occupies less space on thechip than BJT. Resulting component density can be extremely high, often exceeding100,000 MOSFETs per chip.
 
A second desirable property is that MOS devices can be connected as resistors andcapacitors. This makes possible the design of system consisting exclusively of MOSFETs and no other components. Exploiting these features makes MOSFETsdominant device in very large-scale integrated circuits (VLSI) systems.
 
FET is a majority carrier device. Its operation depends on the use of an appliedelectric field to control device current. Thus FET is a voltage controlled current source.
The Enhancement MOSFET
MOSFET is obtained by using a metal gate separated by an oxide layer (SiO
2
) from thesemiconductor channel. Channel characteristics are controlled by an electric fieldestablished by applying the voltage between the gate and body of the semiconductor andtransmitted through the insulation layer.There are tow types of MOS transistors.
 
Depletion MOSFET
 
Enhancement MOSFET1.
 
Depletion MOSFETThis device has maximum current at zero gate voltage and fixed drain voltage andthen current decreases with applied gate potential of proper polarity.
 
Field Effect Transistor (FET) 
Butterfly
 s
Page 2
 
For a depletion NMOS transistor, the channel conducts even if V
GS
=0.
 
If the value of V
GS
is positive, the channel is further enhanced. That is, morefree electrons are attracted to the channel, and its conductivity increases.
 
If the V
GS
is negative, free electrons are repelled from the channel. Theconductivity of the channel is thus decreased. We call this phenomenonchannel depletion.
 
If the value of the V
GS
is sufficiently negative, all of the free electrons in thechannel will be repelled-the channel is said to be completely depleted.
 
A channel that is completely depleted cannot conduct. In other words, thedepletion MOSFET is in cutoff.
 
Thus, the negative value of V
GS
at which the channel is completely depleted isthe threshold voltage V
for a depletion NMOS device. In other words, to havea conducting channel, the gate-to-source voltage V
GS
must be greater than thethreshold voltage V
.V
GS
> V
 V
GS
- V
>0
 
Field Effect Transistor (FET) 
Butterfly
 s
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