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BJT Ebers Moll representaion

BJT Ebers Moll representaion

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Published by RamanaButterfly
Ebers-Moll model consists of two back-to-back connected diodes whose cathodes are connected
Ebers-Moll model consists of two back-to-back connected diodes whose cathodes are connected

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Published by: RamanaButterfly on Jun 05, 2011
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06/05/2011

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The Ebers-Moll representation of the BJT 
Butterfly
 s
Page 1
The Ebers-Moll representation of the BJT
Ebers-Moll model for pnp transistor is shown in the figure. It consists of two back-to-back connected diodes whose cathodes are connected. The base region is common to bothemitter and collector junctions. Since base region is very narrow considerable interactionexists between the junctions. This coupling is represented by the controlled current sources.The current I
ED
and I
CD
are relative to V
EB
by the diode volt-ampere relation and is given by
)1(1
 / 
CB EB
CS R ESCD R ED E 
 I  I  I  I 
      
--------(1)
1)1(
 / 
CB EB
CS ESCD ED
 I  I  I  I 
      
----(2)The relationships expressed in Eq(1) and Eq(2) are known as the Ebers-Moll equations. Thequantities I
ES
and I
CS
in above equations are the reverse saturation currents of the emitter-base and collector-base junctions, respectively.The parameters
α
F
and
α
R
are each less than unity. The four quantities I
ES
, I
CS
,
α
F
,
α
R
arefunction of doping densities and transistor geometry and they related by
α
F
I
ES
=
α
R
I
CS
------------(3)
 
The Ebers-Moll representation of the BJT 
Butterfly
 s
Page 2
and 0.98 α
F
0.998 and 0.40 α
F
 
≤ 0.8
 and I
ES
and I
CS
are in the order of 10
-15
A, both depends on the junction areas.
Eber-Moll equations for npn transistor:
The directions of all current components and junction voltages for an npn transistorare reversed from those for a pnp device as shown Fig. The Ebers-Moll equations for an npndevice are given below.
)1(1
 / 
CB EB
CS R ES E 
 I  I 
     
--------(4)
1)1(
 / 
CB EB
CS ES
 I  I 
     
-------(5)Large-Signal Current Gains:Let us consider npn for the situation that emitter-base is forward biased(V
EB
<0) and that thecollector and base terminals are short-circuited(V
CB
=0). Under these conditions Eq(4) and (5)becomes
1
 / 
 EB
 ES E 
 I 
  
 and
)1(
 EB
 ES
 I 
   
 
 E 
 I 
 
and
 
is defined as
0
CB
 E 
 I  I 
 
-------(6)The quantity
α
F
is called common-base forward short-circuit current gain.

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