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BD137

BD137

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Published by diney m e willemen
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de tudo um pouco

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Published by: diney m e willemen on Jun 18, 2011
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06/18/2011

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 ©2000 Fairchild Semiconductor InternationalRev. A, February 2000
1   3   5   /    1   3  7   /    1   3   9  
1
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
 
unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
h
FE
Classification
SymbolParameterValueUnits
V
CBO
Collector-Base Voltage : BD135: BD137: BD139456080VVVV
CEO
Collector-Emitter Voltage : BD135: BD137: BD139456080VVV
 
V
EBO
Emitter-Base Voltage 5V
 
I
C
Collector Current (DC) 1.5A
 
I
CP
Collector Current (Pulse) 3.0A
 
I
B
Base Current 0.5A
 
P
C
Collector Dissipation (T
C
=25
°
C)12.5WP
C
Collector Dissipation (T
a
=25
°
C)1.25WT
J
Junction Temperature 150
°
CT
STG
Storage Temperature- 55 ~ 150
°
C
SymbolParameterTest ConditionMin.Typ.Max.Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage: BD135: BD137: BD139I
C
= 30mA, I
B
= 0
 
456080VVVI
CBO
Collector Cut-off CurrentV
CB
= 30V, I
E
= 00.1
µ
A
 
I
EBO
Emitter Cut-off CurrentV
EB
= 5V, I
C
= 0 10
µ
A
 
h
FE1
h
FE2 
h
FE3
DC Current Gain : ALL DEVICE: ALL DEVICE: BD135: BD137, BD139V
CE
= 2V, I
C
= 5mAV
CE
= 2V, I
C
= 0.5AV
CE
= 2V, I
C
= 150mA25254040250160V
CE
(sat) Collector-Emitter Saturation VoltageI
C
= 500mA, I
B
= 50mA0.5VV
BE
(on) Base-Emitter ON VoltageV
CE
= 2V, I
C
= 0.5A 1VClassification61016h
FE3
40 ~ 10063 ~ 160100 ~ 250
BD135/137/139
Medium Power Linear and SwitchingApplications
Complement to BD136, BD138 and BD140 respectively1. Emitter 2.Collector 3.Base
 
 ©2000 Fairchild Semiconductor International
1   3   5   /    1   3  7   /    1   3   9  
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current GainFigure 2. Collector-Emitter Saturation VoltageFigure 3. Base-Emitter VoltageFigure 4. Safe Operating AreaFigure 5. Power Derating
1010010000102030405060708090100
V
CE
= 2V
 
   h
   F   E
 ,   D   C   C   U   R   R   E   N   T   G   A   I   N
I
C
[mA], COLLECTOR CURRENT
1E-30.010.1110050100150200250300350400450500
               I
 
              C 
 
        =               1              0                 I
 
               B
                                                                              I
 
                                                                              C   
                                       =                                                                            2                                                                           0                                                                                  I
 
                                                                              B
 
   V
   C   E
   (  s  a   t   )   [  m   V   ] ,   S   A   T   U   R   A   T   I   O   N   V   O   L   T   A   G   E
I
C
[A], COLLECTOR CURRENT
1E-30.010.11100.10.20.30.40.50.60.70.80.91.01.1
  V
 B E
 
 (  o n  )  V
 C E
 
  =  5  V  V
 B E
 (  s a t  ) I
 
 C
  =  1 0  I
 
 B
 
   V
   B   E
   [   V   ] ,   B   A   S   E  -   E   M   I   T   T   E   R   V   O   L   T   A   G   E
I
C
[A], COLLECTOR CURRENT
1101000.010.1110
1   3   9  1   3  7  1   3   5  
10us100us
1   m   s   
D   C    
I
C
MAX. (Pulsed)I
C
MAX. (Continuous)
 
   I
   C
   [   A   ] ,   C   O   L   L   E   C   T   O   R   C   U   R   R   E   N   T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
02550751001251501750.02.55.07.510.012.515.017.520.0
 
   P
   C
   [   W   ] ,   P   O   W   E   R   D   I   S   S   I   P   A   T   I   O   N
T
C
[
o
C], CASE TEMPERATURE
 
Package Demensions
 ©2000 Fairchild Semiconductor InternationalRev. A, February 2000
1   3   5   /    1   3  7   /    1   3   9  
Dimensions in Millimeters
3.25
±
0.20
8.00
±
0.30
ø3.20
±
0.10
0.75
±
0.10
#10.75
±
0.10
2.28TYP[2.28
±
0.20]2.28TYP[2.28
±
0.20]1.60
±
0.10
   1   1 .   0   0
      ±
   0 .   2   0
   3 .   9   0
      ±
   0 .   1   0
   1   4 .   2   0   M   A   X   1   6 .   1   0
      ±
   0 .   2   0
   1   3 .   0   6
      ±
   0 .   3   0
1.75
±
0.20
(0.50)(1.00)0.50
+0.10 –0.05
TO-126

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