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rr221401-electronic-devices-and-circuits

# rr221401-electronic-devices-and-circuits

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05/09/2014

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Code No: RR221401
Set No. 1
II B.Tech Supplimentary Examinations, Aug/Sep 2008ELECTRONIC DEVICES AND CIRCUITS(Mechatronics)Time: 3 hours Max Marks: 80Answer any FIVE QuestionsAll Questions carry equal marks
⋆⋆⋆⋆⋆
1. (a) Draw the Energy Band Diagrams of i. conductorii. semiconductor andiii. Insulator and discuss the nature of their conductivities(b) The voltage across a Silicon diode at room temperature of 300
0
K is 0.7 volts,when 2ma of current ﬂows through it. If the voltage increases to 0.75 volts,calculate the diode current when the voltage equivalent of temperature ‘
?=26mv=0.026 volts [10+6]2. (a) Draw the full wave rectiﬁer circuit with center tapped secondary power trans-former.(b) With reference to the fullwave rectiﬁer circuit, draw the input signal waveform,at the secondary winding and at the load, when the input voltage to theprimary of the Transformer is V
Pr
= 230Sin(
ω
t) and the secondary voltagesare V
S1
= 30Sin(
ω
t) and V
S2
= 30Sin(
ω
t+Π)
.
(c) Explain the working of Full Wave rectiﬁer circuit using the signal waveforms.(d) Calculate the magnitude of the ripple factor for the given set of observationsof V
A
.
C
= 24 Volts and V
D
.
C
= 50 volts. Identify the type of rectiﬁer circuitbased on the value of the ripple factor. [4x4]3. (a) Draw a diagram showing Various currents in a PNP Transistor in CB mode.(b) Explain the phenomenon of Base width modulation in Transistor operationand discuss its inﬂuence on Base current ‘
B
’ in a Common Base operatedTransistor.(c) Draw the output characteristics of a Common Base operated Transistor anddiscuss the role of ‘Early Eﬀect’ on the CB Transistor output characteristics.(d) Explain the operation of a PNP Transistor in Common Base conﬁguration.[3+3+4+6]4. (a) Discuss the reasons for Transistor bias stabilization.(b) Discuss the importance of coupling and bypass capacitances in low frequencytransistor circuits(c) Draw the low frequency small signal ac equivalent circuit of a Common EmitterTransistor and discuss the assumptions made in obtaining the circuit.(d) Discuss the phenomenon of ‘Thermal runaway’ in Transistor operation. [3+4+6+3]1 of 2

Code No: RR221401
Set No. 1
5. (a) Explain the method of calculation of voltage and current gains for a singlestage CE Transistor ampliﬁer using CE Transistor output characteristics andload line(b) Draw the typical graph showing the variations of voltage gain of transistorampliﬁer with frequency. Show the various regions of operations on the graph.Also mark the method of calculation for ampliﬁer Bandwidth. [8+8]6. (a) An N-channel JFET having
= - 4V and
DSS
= 12 ma is used as commonsource FET ampliﬁer with potential divider biasing circuit. The parametervalues are
DD
=24V.
R
= 1KΩ ;
R
L
= 1.25KΩ ;
R
1
= 450KΩ and
R
2
=90KΩ . Draw the circuit with these parameters and explain the circuit workingas ampliﬁer(b) Draw the D.C equivalent circuit of the above ampliﬁer circuit and determinethe values of drain current
D
and
DS
. [8+8]7. (a) Draw typical frequency responses of an ampliﬁer with and without negativefeedback.(b) Derive the expression for increase in bandwidth of an ampliﬁer using negativefeedback and substantiate for such feature.(c) R-C coupled ampliﬁer has midband gain
A
m
= 500; Low frequency Cut-oﬀ point
L
= 30 Hz and High frequency cut-oﬀ point
= 20 KHZ. Negativevoltage Feedback is added such that
β
= 2x10
3
. Calculate the midband gain
A
mf
and the bandwidth of the negative feedback ampliﬁer. [4+6+6]8. (a) State the requirements for oscillations as embodied in the Barkhausen crite-rion.(b) Draw a circuit of tuned-collector oscillator and explain its working with a cleardiscussion on positive feedback used in the circuit and oscillator frequency(c) Calculate the transistor Colpitts oscillator’s frequency
0
; when its frequencydetermining network components are L= 100
µ
H;
1
=0.05
µ
f and
2
= 0.01
µ
f. [4+8+4]
⋆⋆⋆⋆⋆
2 of 2

Code No: RR221401
Set No. 2
II B.Tech Supplimentary Examinations, Aug/Sep 2008ELECTRONIC DEVICES AND CIRCUITS(Mechatronics)Time: 3 hours Max Marks: 80Answer any FIVE QuestionsAll Questions carry equal marks
⋆ ⋆ ⋆ ⋆
1. (a) Explain about Drift and Diﬀusion currents in semiconductors. [3+3](b) Explain about cut-in voltage of forward characteristic of semiconductor diode[4](c) Calculate the magnitude of maximum electric ﬁeld at 300
0
for P-N junctionwith
A
=10
20
/c
m
3
on P-side and
D
=10
15
/c
m
3
on N-side of a Silicon semi-conductor diode.Intrinsic carrier concentration
n
i
=2
.
5
x
10
10
/c
m
3
and.
=25mv at 300
0
K [3](d) Explain about the signicance of built-in voltage [3]2. (a) Mention the parameters that cause for ﬂuctuations in the output voltage of aregulated power supply circuit.(b) Draw the equivalent circuit of a Tunnel Diode.(c) Explain the signiﬁcance of the ratio of peak current to valley currents on theTunnel Diode characteristic and its relation to the Figure of merit of TunnelDiodes. Explain its signiﬁcance as the device to operate as a high speed switch.[4+6+6]3. (a) Draw a diagram showing the structural details of UJT device.(b) Draw a diagram showing the equivalent circuit of an Unijunction Transistor.(c) Deﬁne Intrinsic stand-oﬀ ratio ‘
η
? from the equivalent circuit of UJT device(d) Obtain the relation between peak-point voltage ‘
’ on the UJT Characteris-tics, supply voltage ‘
BB
’, Intrinsic stand-oﬀ ratio ‘
η
’ and the barrier potentialof P-N junction. Explain the signiﬁcance of peak-point voltage on switchingaction of UJT device. [3+4+3+6]4. (a) Draw the small signal Low Frequency equivalent circuit of CE Transistor usingthe Transistor h-parameters and explain the various parameters used in thecircuit.(b) From the CE Transistor h-parameter equivalent circuit derive the expressionsfor calculating voltage and current gains of Transistor ampliﬁer circuits.(c) Discuss the concept of DC bias and its stability for linear Transistor ampliﬁeroperation [6+6+4]5. (a) State and explain the parameters f
α
,
β
,
T
and Gain-Bandwidth product of Transistor ampliﬁers.1 of 2