BPW77N

Vishay Semiconductors

Silicon NPN Phototransistor

Description
BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of 10 makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.

94 8401

Features
Hermetically sealed case Lens window Narrow viewing angle = 10 Exact central chip alignment Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
Detector in electronic control and drive circuits

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector current Collector peak current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Thermal Resistance Junction/ Case t5s tp/T = 0.5, tp 10 ms Tamb 25 C Test condition Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 80 70 5 50 100 250 125 - 55 to + 125 260 400 150 Unit V V V mA mA mW C C C K/W K/W

Document Number 81527 Rev. 1.4, 08-Mar-05

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BPW77N
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Collector Emitter Breakdown Voltage Collector-emitter dark current Collector-emitter capacitance Test condition IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol V(BR)CEO ICEO CCEO Min 70 1 6 100 Typ. Max Unit V nA pF

Optical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Ee = 1 IC = 1 mA mW/cm2, = 950 nm, Test condition Symbol p 0.5 VCEsat ton toff fc Min Typ. 10 850 620 to 980 0.15 6 5 110 0.3 Max Unit deg nm nm V s s kHz

VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100

Type Dedicated Characteristics

Parameter Collector Light Current Test condition Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Part BPW77NA BPW77NB Symbol Ica Ica Min 7.5 10 Typ. 10 20 Max 15 Unit mA mA

Typical Characteristics (Tamb = 25 C unless otherwise specified)

Ptot Total Power Dissipation ( mW ) I CEO - Collector Dark Current ( nA )

800

10 6 10 5 10 4 10 3 10 2 10 1 10 0 20 V CE = 20V E=0

600 RthJC

400

200 RthJA 0 0 25 50 75 100 125 150

50

100

150

94 8342

Tamb Ambient T emperature ( C )

94 8343

Tamb - Ambient Temperature ( C )

Figure 1. Total Power Dissipation vs. Ambient Temperature

Figure 2. Collector Dark Current vs. Ambient Temperature

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Document Number 81527 Rev. 1.4, 08-Mar-05

BPW77N
Vishay Semiconductors
C CEO Collector Emitter Capacitance ( pF )

20 16 f=1MHz

2.50
I ca rel - Relative Collector Current

2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0

VCE = 5 V E e = 1 mW/cm 2 = 950 nm

12

4 0 0.1 1 10 100 V CE Collector Emitter Voltage ( V )

10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )

94 8247

948344

Figure 3. Relative Collector Current vs. Ambient Temperature

Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage

12 10 8 6 4 2 0 ton V CE=5V RL=100 =950nm

BPW77NB 10

BPW77NA

0.1 V CE = 5 V = 950 nm 0.01 0.01 0.1 1 10

ton / toff Turn on / Turn off Time ( s )

Ica Collector Light Current ( mA)

100

toff

0
94 8253

12

16

94 8349

Ee Irradiance ( mW/cm2 )

I C Collector Current ( mA )

Figure 4. Collector Light Current vs. Irradiance

Figure 7. Turn On/Turn Off Time vs. Collector Current

10
Ica Collector Light Current ( mA)

= 950 nm

Ee=1mW/cm2 0.5 mW/cm2 0.2 mW/cm2

S ( )rel Relative Spectral Sensitivity

1.0 0.8 0.6 0.4 0.2 0 400

0.1 mW/cm2 0.05 mW/cm2

0.02 mW/cm2 0.1 0.1

94 8350

10

100
94 8348

600

800

1000

V CE Collector Emitter Voltage ( V )

Wavelength ( nm )

Figure 5. Collector Light Current vs. Collector Emitter Voltage

Figure 8. Relative Spectral Sensitivity vs. Wavelength

Document Number 81527 Rev. 1.4, 08-Mar-05

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BPW77N
Vishay Semiconductors
0 10 20 30
Srel - Relative Sensitivity

Figure 9. Relative Radiant Sensitivity vs. Angular Displacement

40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6

94 8351

Package Dimensions in mm

96 12180

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Document Number 81527 Rev. 1.4, 08-Mar-05

BPW77N
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 81527 Rev. 1.4, 08-Mar-05

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