EE105 - Fall 2006
Microelectronic Devices and
due to the concentration gradient,
mobile charges transfer near
minority carriers in new region
(can\u2019t penetrate far due to
\ue002E-Field zero outside of depletion region
\ue002Note the asymmetrical depletion widths
\ue002Which region has higher doping?
\ue002Slope of E-Field larger in n-region. Why?
\ue002Peak E-Field at junction. Why continuous?
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