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2SA1943

2SA1943

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Published by Dan Hauer
TOSHIBA Transistor Silicon PNP Triple Diffused Type DATASHEET
TOSHIBA Transistor Silicon PNP Triple Diffused Type DATASHEET

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Published by: Dan Hauer on Oct 26, 2011
Copyright:Attribution Non-commercial

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10/26/2011

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2SA1943
2006-11-091
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
 
Power Amplifier Applications
 
High collector voltage: V
CEO
=
230 V (min)
 
Complementary to 2SC5200
 
Recommended for 100-W high-fidelity audio frequency amplifieroutput stage.
Absolute Maximum Ratings
(Ta = 25°C)
 
Characteristics Symbol Rating UnitCollector-base voltage V
CBO
 
230 VCollector-emitter voltage V
CEO
 
230 VEmitter-base voltage V
EBO
 
5 VCollector current I
C
 
15 ABase current I
B
 
1.5 ACollector power dissipation(Tc = 25°C)P
C
 
150 WJunction temperature T
 j
 
150 °CStorage temperature range T
stg
 
55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) arewithin the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).Unit: mm
 
JEDEC
 JEITA
 TOSHIBA 2-21F1AWeight: 9.75 g (typ.)
 
2SA1943
2006-11-092
Electrical Characteristics
(Ta = 25°C)
 
Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current I
CBO
V
CB
=
230 V, I
E
= 0
 
 
5.0 µAEmitter cut-off current I
EBO
V
EB
=
5 V, I
C
= 0
 
 
5.0 µACollector-emitter breakdown voltage V
(BR) CEO
I
C
=
50 mA, I
B
= 0
230
 
Vh
FE (1)
(Note)V
CE
=
5 V, I
C
=
1 A 55
160DC current gainh
FE (2)
V
CE
=
5 V, I
C
=
7 A 35 60
 Collector-emitter saturation voltage V
CE (sat)
I
C
=
8 A, I
B
=
0.8 A
 
1.5
3.0 VBase-emitter voltage V
BE
V
CE
=
5 V, I
C
=
7 A
 
1.0
1.5 VTransition frequency
T
V
CE
=
5 V, I
C
=
1 A
30
MHzCollector output capacitance C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
360
pF
Note: h
FE (1)
classification R: 55 to 110, O: 80 to 160
Marking
2SA1943
 TOSHIBA
JAPAN
 Lot No.A line indicateslead (Pb)-free package or lead (Pb)-free finish.Part No. (or abbreviation code)
 
2SA1943
2006-11-093
 
h
FE
– I
C
 
   D   C  c  u  r  r  e  n   t  g  a   i  n   h
   F   E
 
I
C
– V
CE
 
   C  o   l   l  e  c   t  o  r  c  u  r  r  e  n   t   I
   C
   (   A   )
Collector-emitter voltage V
CE
(V)Collector current I
C
(A)Collector-emitter voltage V
CE
(V)
   C  o   l   l  e  c   t  o  r  c  u  r  r  e  n   t   I
   C
   (   A   ) 
Collector current I
C
(A)
V
CE (sat)
– I
C
 
   C  o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  s  a   t  u  r  a   t   i  o  n  v  o   l   t  a  g  e   V
   C   E   (  s  a   t   )
   (   V   ) 
Safe Operating AreaI
C
– V
BE
 
   C  o   l   l  e  c   t  o  r  c  u  r  r  e  n   t   I
   C
   (   A   )
Base-emitter voltage V
BE
(V)
Common emitter Tc = 25°C00IB=
10 mA
800
4
8
12
16
20
2
4
6
8
10
50
600
400
250
200
150
100
40
20
30Common emitter VCE=
5 V3
0.01 
25251030100300
0.1
1
10Tc = 100°C
100*: Single nonrepetitive pulseTc = 25°CCurves must be deratedlinearly with increase intemperature.ICmax (pulsed)*DC operationTc = 25°C
2
3
5
10
30
50100 ms*10 ms*1 ms*VCEOmax
0.3
100
300
1000
0.5
1
0.03
0.05
0.1
30ICmax (continuous)
10
 
Common emitter VCE=
5 V00Tc = 100°C
4
8
12
16
20
25
0.4
0.8
1.2
1.6
2.025Common emitter IC/IB= 10Tc = 100°C
0.001
0.01
0.1
1
0.1
3
1
2525
0.3
10
100

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