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Photoelectric Conversion Device

Photoelectric Conversion Device

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Published by Jason Warden
A photoelectric conversion device which is thin, lightweight and flexible even in the case of using a crystalline semiconductor such as a single crystal silicon.

This energy collection (thermal/photoelectric conversion) device can be used from everything between satellites, cars, aircraft, housing, farming, home gardens, and even infinitely powered laptops, gaming thingies, ipads (androids) whatever you want.
A photoelectric conversion device which is thin, lightweight and flexible even in the case of using a crystalline semiconductor such as a single crystal silicon.

This energy collection (thermal/photoelectric conversion) device can be used from everything between satellites, cars, aircraft, housing, farming, home gardens, and even infinitely powered laptops, gaming thingies, ipads (androids) whatever you want.

More info:

Categories:Types, Research, Science
Published by: Jason Warden on Oct 27, 2011
Copyright:Attribution Non-commercial

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12/19/2012

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us
20100307582Al
(19)
United
States
(12)
PatentApplicationPublication
ARAI
(10)
Pub.No.:
US2010/0307582Al
(43)
Pub.Date:
Dec.9,2010
(54)PHOTOELECTRICCONVERSIONDEVICEPublicationClassification(75)Inventor:YasuyukiARAI,Atsuki
(lP)
(51)Int.Cl.
HOlL31100(2006.01)
(52)U.S.Cl.136/256CorrespondenceAddress:FISH
&
RICHARDSONP.C.(DC)P.O.BOX1022MINNEAPOLIS,MN55440-1022(US)(57)ABSTRACT(21)Appl.No.:
121788,744
Aphotoelectricconversiondevicewhichisthin,lightweight,andflexibleeveninthecaseofusingacrystallinesemicon-ductorsuchassinglecrystalsilicon.Aphotoelectricconver-sionlayerisprovidedincontactwithaninsulatingfilmpro-videdononesurfaceofasupportsubstrate.
An
electrode(rearelectrode)whichisincontactwithonesurfaceofthephoto-electricconversionlayerisprovidedinaccordancewithaopeningwhichpassesthroughthesupportsubstrateandtheinsulatingfilm.Therearelectrodeisinelectricalcontactwiththephotoelectricconversionlayerandthesupportsubstrate.Ontheothersurfaceofthephotoelectricconversionlayer,anelectrode(surfaceelectrode)onalightincidencesideispro-vided.Thephotoelectricconversionlayerisformedusingasemiconductormaterial;preferably,asinglecrystalsemicon-ductororapolycrystallinesemiconductorisused.(73)Assignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.,Atsugi-shi
(lP)
(22)Filed:May27,2010(30)ForeignApplicationPriorityData
lun.
5,2009
(lP)
2009-136279
100
112114
 
PatentApplicationPublication
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