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Cmos Design Modelling

Cmos Design Modelling

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Published by api-3819035
VLSI, CMOS, CELL DESIGN, MODELLING
VLSI, CMOS, CELL DESIGN, MODELLING

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Published by: api-3819035 on Oct 17, 2008
Copyright:Attribution Non-commercial

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03/18/2014

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Cours en ligne
CMOS Design
MOS Device
n
MOS Behavior
n
Three MOS Options
n
MOS as a Switch
MOS Modeling
n
History
n
What is a MOS model?
n
MOS Model 1
n
MOS Model 3
n
BSIM4
n
Dynamic Behavior
n
Temperature Effect
n
Conclusion
I nverter
n
Inverter Behavior
n
Inverter Power Consumption
n
Ring Oscillator
n
Conclusion
Basic Design Rules
n
Lambda Based Design
n
MOS Design Rules
n
Interconnect Design Rules
n
Conclusion
Analog Cell Design
n
Introduction
n
MOS Diod
n
Voltage Reference
n
Current Mirror
n
Amplifier
n
Converters
n
Sample and Hold Circuit
n
Frequency Converter
Field Programmable Gate Array
n
Introduction
Page 1 of 2
CMOS Design Menu
3/19/2007
htt ://www.lesia.insa-toulouse.fr/~bendhia/Cours/CMOS/menu_cmos.html
n
Configurable Logic Circuits
n
Programmable Logic Block
n
Interconnection between Blocks
n
Conclusion
Mem ories
n
The World of Memories
n
Static RAM Memory
n
A 64 Bit Static RAM
n
Dynamic RAM
n
ROM Memory
n
EEPROM Memory
n
Flash Memories
n
Classification
n
Conclusion
I / O I nterface Design
n
I/O Interface
n
Schmidt Trigger
n
Pad Ring Structure
Ex ecises
Page 2 of 2
CMOS Design Menu
3/19/2007
htt ://www.lesia.insa-toulouse.fr/~bendhia/Cours/CMOS/menu_cmos.html
MOS Behavior
N-channel MOS behavior

The expected behavior of the n-channel MOS device is summarized below. The 0 on the gate
should leave the drain floating. The 1 on the gate should link the drain to the source, via a
resistive path.

P-channel MOS behavior

The expected behavior of the p-channel MOS device is summarized below. The 0 on the gate
should link the drain to the source, via a resistive path. The 1 on the gate should leave the drain
floating. In other words, the p-channel transistor simulation features the same functions as the
n-channel device, but with opposite voltage control of the gate.

This figure shows the reduction of the MOS Roff with the technology scale down and
consequently the static current in stand by regime increases dramatically. For a block including
1 million transistors the current could reach almost 1A in 0.07\u00b5m technology that is
enaffordable for most of CMOS applications. This kind of problems was the stargins points of

CMOS Design > MOS Device
l
ROFF close from 1M\ue000 (drain floating)
l
RON close from 1K\ue000 (drain linked to source)
l
ROFF close from 1M\ue000 (drain floating)
l
RON close from 1K\ue000 (drain linked to source)
Page 1 of 2
Cours en ligne - CMOS Design - MOS Device
3/19/2007
htt ://www.lesia.insa-toulouse.fr/~bendhia/Cours/CMOS/mos_device_behavior.html

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