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The expected behavior of the n-channel MOS device is summarized below. The 0 on the gate
should leave the drain floating. The 1 on the gate should link the drain to the source, via a
The expected behavior of the p-channel MOS device is summarized below. The 0 on the gate
should link the drain to the source, via a resistive path. The 1 on the gate should leave the drain
floating. In other words, the p-channel transistor simulation features the same functions as the
n-channel device, but with opposite voltage control of the gate.
This figure shows the reduction of the MOS Roff with the technology scale down and
consequently the static current in stand by regime increases dramatically. For a block including
1 million transistors the current could reach almost 1A in 0.07\u00b5m technology that is
enaffordable for most of CMOS applications. This kind of problems was the stargins points of
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