TOSHIBA TC74HC132AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC132AP, TC74HC132AF, TC74HC132AFN QUAD 2-INPUT SCHMITT NAND GATE (Note) The JEDEC SOP (FX) is not available in Japan, ‘The TC74HC132A is a high speed CMOS 2-INPUT NAND SCHMITT TRIGGER GATE fabricated with silicon gate C2MOS technology. Tt achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the 'TC74HCOOA but the inputs have 25% Voc hysteresis and with its schmitt trigger inputs, the TC74HC182A can be used as a line receiver for slow input signals. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES + High Speed: ‘Ans(typ.) at Voo=5V + Low Power Dissipation 1/A(Max) at Ta =25°C + High Noise Immunity: + Output Drive Capability ~ + Symmetrical Output Impedance--| lon | =lo. = 4mA(Min.) + Balanced Propagation Delays~toiH=tont + Wide Operating Voltage Range Voc (opr.) = 2V~6V 1V at Voo=5V }0 LSTTL Loads ( DIP14-P-300-2.54) Weight 0.969 (Typ.) F(SoPt4-P-300-1.27) Weight: 0.189 (Typ.) FN (SOL147-150-1.27) Weight 0.129 Typ.) PIN ASSIGNMENT [Pin‘and Function Compatible with 74081092 and Function Compatible wid Hv vec SYSTEM DIAGRAM, WAVEFORM w2Q 1] 13 48 —_ , wag H iz aa ae nad Hin ay . asd H 10 38 vated ASA, nef He 3a 1 1 GND 7 8 3Y Vous) (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE mL LY L L H ee a pote H H L 2001-05-17TOSHIBA ABSOLUTE MAXIMUM RATINGS TC74HC132AP/AF/AFN PARAMETER [symBou VALUE UNIT] s500mW in the range of Te= Supply Voltage Range Vec = 05-7 v = 40°C~65°C. From Ta=65°C =05-Ver Ww 85°C a derating factor of DC Input Voltage Vin O5~Vec+0.5 v te BOG dean factor of DE Output Voltage Vout =05~Vec +05 v ‘until 300mW. Input Diode Current oe #20 mA Output Diode Current lox +20 mA DC Output Current Jour £25 mA DC Vec/Ground Current | lec £50 mA Power Dissipation Po_| _S00(DIP)*/180(SOP)_|_ mw. Storage Temperature Tag =65~150 °c RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL VALUE UNT Supply Voltage Vee 2-6 v Input Voltage Vin O=Vee v Output Voltage Vour 0=Vec v Operating Temperature __| Topr =40~85 °C DC ELECTRICAL CHARACTERISTICS PARAMETER — |symsot| TEST CONDITION Ww Tas 80-85" un Positive Threshold ve 32) 33 | 333 v Voltage 60| 30 | 350 Negative Threshold |, 39) 930 | 068 v Voltage 60 | 1:50 | 230 20/03 | 06 Hysteresis Output Voltage Vn 43) 88 | 13 v 20/19 | 20 lon=— 20-8 | 45] a4 | a5 High - Level Vine Output Voltage Vou | Vinorvin ees v Tow==4_ ma] 45 | 4.18 | 431 low=—5.2ma | 6.0 | 5.68 | 5.80 20 = [oo [or | — [or lvs2ea | 45] - foo }or | — | on Low-Level Vine = Output Voltage Vor | Vinorvic se ae 6s oY lo=4_ ma | 4s[ — | 0.17 | 026 033 lor=s.2ma_| 60] — | 0.18 | 026 | — | 033 input Leakage Current | tin Viw= Vec or GND so = | = [eor] = [ero] Quiescent supply Current] ec Vin= Vec or GND eof = [= [0 [= Tio |“ 2001-05-17TOSHIBA TC74HC132AP/AF/AFN ‘AC ELECTRICAL CHARACTERISTICS ( C, = 15pF, Vec= 5V, Ta=25°C, Input t,=ty=6ns) PARAMETER symao] TEST CONDITION Max. [UNIT Output Transition Time ow 8 : ns Propagation Delay Time | {" 18 (AC ELECTRICAL CHARACTERISTICS ( C, = 50pF, Input t, = t;= 6ns) Jaze [Ta==40-85°C PARAMETER, symaot | TEST CONDITION nh 85 unr th 30, 95 Output Transition Time t, ue 45 8 19 an 60 7 16 | 5 el |e 8 Propagation Delay Time an 1. pag ¥ tom 6.0 12. 24 Input Capacitance Cw 5 10 F Power Dissipation Capacitance | Gro (1) 29 =" Note (1) Crp is defined as the value of the internal equivalent capacitance wi operating current consumption without load. Average operating current can be obtained by the equation : fin+lec/4( per Gate) lec (Opt) =Cpp * Vee jch is calculated from the 2001-05-17