Dioda Zener

Dioda yang digunakan pada daerah breakdown Simbol Dioda Zener

A K

Elektronika 1 (Minggu 6)

Karakteristik Bias Terbalik Dioda Zener

ID

Dioda Zener dan Transistor Bipolar

-VZ IZK VD

Dioda Zener
Rangkaian Ekuivalen Dioda Zener
A
A K

Dioda Schottky
Dioda yang terbuat dari aluminium-silikon yang memiliki karakteristik serupa dengan dioda pn junction dengan perbedaa utama :
RZ

Cut in Dioda Schottky lebih rendah daripada dioda pn junction Reverse Current Dioda Schottky lebih besar daripada dioda pn junction

VZ

ID
Dioda Zener pada Rangkaian Regulator sederhana

Rs
Vs

Rs

VD
VZ RL Vo=Vz

RL

Vs

= Dioda Schottky = Dioda pn

3 4

Bipolar Junction Transistor

Sumber Arus Tak Bebas Ideal

Bipolar Junction Transistor

Representasi Ebers-Moll dari BJT
Transistor PNP

v 2 = Ai1 R L =

AR L vs Rs
I E = I ED R I CD I E = I ES ( e
5
v EB VT

I C = I CD R I ED
v CB VT

v CB

v EB

1) R I CS ( e

1)

I C = I CS ( e VT 1) F I ES ( e VT 1)
6

Bipolar Junction Transistor

Representasi Ebers-Moll dari BJT
Transistor NPN

Bipolar Junction Transistor

Pada BJT berlaku :
Reciprocity condition

F I E = R I CD
KCL pada Basis adalah :

I B = ( I E + I C )
Penguatan Arus: Common based forward short circuit current gain

F = h FB =

IC IE

VCB = 0

Common based reverse short circuit current gain

I E = I ED + R I CD
v EB

I C = I CD + F I ED
v CB

R =
v EB

v CB

IE IC

I E = I ES ( e

VT

1) + R I CS ( e

VT

1)

I C = I CS ( e

VT

1) + F I ES ( e

VT

1)
7

V EB = 0

Bipolar Junction Transistor

Penguatan arus :
Transistor NPN Kondisi VCB = 0 (short circuit) ; VEB < 0 (forward) v

EB

Bipolar Junction Transistor

Penguatan arus :
Transistor NPN Kondisi VEB = 0 (short circuit) ; VCB < 0 (forward)

I E = I ES (e I E = I ES (e

VT

1) + R I CS (e 0 1) 1)......................................(1)
v EB VT

I E = I ES (e0 1) + R I CS (e I E = R I CS (e
v EB

vCB

VT

1)

v EB VT

VT

vCB

1)......................................(1)

I C = I CS (e

VT
vCB VT

1) + F I ES (e0 1) 1)..................................(2)
karena I B = ( I E + I C ) maka :
V EB = 0

I C = I CS (e0 1) + F I ES (e I C = F I ES (e
(1) (2)
v EB

1)

I C = I CS (e
(1) (2)

VT

1)..................................(2)
karena I B = ( I E + I C ) maka :

I F = C IE

R =

V CB = 0

F I B = I C (1 F ) F IC = IB (1 F ) IC = F I B

IE IC

R I B = I E (1 R ) R IE = IB (1 R ) IE = RIB
10

Bipolar Junction Transistor

Penguatan arus :
Transistor PNP Kondisi VCB = 0 (short circuit) ; VEB > 0 (forward)

Bipolar Junction Transistor

Penguatan arus :
Transistor PNP Kondisi VEB = 0 (short circuit) ; VCB > 0 (forward)
vCB

I E = I ES (e

v EB VT v EB

1) R I CS (e 0 1)

I E = I ES (e 0 1) R I CS (eVT 1)
vCB

I E = I ES (eVT 1)......................................(1) I C = I CS (e0 1) F I ES (e I C = F I ES (e

(1) (2)
v EB VT vEB VT

I E = R I CS (eVT 1)......................................(1) I C = I CS (e I C = I CS (e
(1) (2)
v CB VT vCB VT

1)

1) F I ES (e0 1) 1)..................................(2)
karena I B = ( I E + I C ) maka :

1)..................................(2)
karena I B = ( I E + I C ) maka :

F =

IC IE

V CB = 0

F I B = I C (1 F ) F IC = IB (1 F ) IC = F I B
11

R =

IE IC

V EB = 0

R I B = I E (1 R ) R IE = IB (1 R ) IE = RIB
12

Bipolar Junction Transistor

Jenis Pembiasan pada Transistor :
Kondisi Pembiasan Jenis Emitor - Basis Kolektor Basis

Bipolar Junction Transistor

Transistor NPN
Kondisi IE=0 (Emitor dalam kondisi open circuit)
I B = ( I E + I C ) maka : I B = IC

Forward-Active Cutoff Saturation Reverse-Active

Forward Reverse Forward Reverse

Reverse Reverse Forward Forward

VCB=Reverse Biased
v CB

I CS e

VT

= 0 maka : I CD = I CS .......... (1)

v EB

I E = I ES ( e

VT

1) ( R I CS )
Arus Kolektor pada npn

I E = I ED + R I CS

Karena : IE=0, maka :

0 = I ED + R I CS I ED = R I CS ........( 2 )
13

I C = I CD + F I ED .........( 3 )
(1)(2) (3) ICO=IC (pada Emitor open circuit)

I CO = I C = I CS (1 R F )
14

Bipolar Junction Transistor

Transistor PNP
Kondisi IE=0 (Emitor dalam kondisi open circuit)
I B = ( I E + I C ) maka : I B = IC

Bipolar Junction Transistor

Common Base (PNP)
v EB vCB VT vCB VT v CB

I E = I ES ( e VT 1) R I CS ( e VT 1) I ES (e 1) = I E + R ICS (e
vCB

1)..............................(1)

v EB

I C = I CS (eVT 1) F I ES (eVT 1)..........................(2)

vCB vCB I C = I CS (eVT 1) F I E + R I CS (eVT 1) vCB I C = I CS (1 F R ) eVT 1 F I E Karena : I CO = I CS (1 R F ) maka :

VCB=Reverse Biased
v CB

I CS e VT = 0 maka : I CD = I CS .......... (1) I E = I ES ( e

v EB VT

(1) (2)

1) ( R I CS )
Arus di Kolektor pnp

I E = I ED + R I CS

IC

Karena : IE=0, maka :

0 = I ED + R I CS I ED = R I CS ........( 2 )

I C = I CD + F I ED .........( 3 )
(1)(2) (3) ICO=IC (pada Emitor open circuit)

I CO = I C = I CS (1 R F )
15

I C = I CO e

vCB VT

1 F I E

VBC

16

Bipolar Junction Transistor

Common Base (NPN)

v EB v CB

Bipolar Junction Transistor

Karakteristik Output Common Base :
IC

I E = I ES ( e I ES (e
v CB VT

VT

1) + R I CS ( e
v CB VT v EB

VT

1)

IE=25 mA

1) = I E + R ICS (e
vCB

1)..............................(1)
1)..........................(2)
IE=15 mA IE=5 mA

I C = I CS (e
(1) (2)

VT

1) + F I ES (e
vCB

VT

v CB 1) + F I E + R I CS (e VT 1) vCB I C = I CS (1 F R ) e VT 1 F I E Karena : I CO = I CS (1 R F ) maka :

I C = I CS (e

VT

Karakteristik Input Common Based :

IE
IC

VBC atau VCB

VCB=0 Kolektor Open

VCB

I C = I CO e

v CB VT

1 F I E

17

VEB atau VBE

18