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Andhrapradesh
Name : K.Radhika
Designation :Lecturer in ECE.
Branch :Electronics& Commn Engg
Institute :Govt Polytechnic Masabtank
Hyderabad.
Year/Semester : III Semester
Subject : Electronics circuits-1
subject code : EC -302
Topic : FET & UJT
Sub Topic : Field Effect Transistor
Duration : 150 Min
Teaching Aids used : Power point, Flash.
EC-302.31 t0 33 1
Objectives
2
Parameters of FET
EC-302.31 t0 33 2
3
Recap
In the previous sessions we have learnt
Transistors
Applications of Transistors
EC-302.31 t0 33 3
4
Field Effect Transistor
EC-302.31 t0 33 4
5
Field Effect Transistor
FET has several advantages over BJT
EC-302.31 t0 33 5
JFET Symbol
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6
Classification of Field Effect Transistors
FET
JFET MOSFET
p-channel N-channel
p-channel N-channel
EC-302.31 t0 33
JFET
Based on the construction JFETS are of Two types
EC-302.31 t0 33
8
Construction
9 Heavily
For
Theatwo doped
ends ofP
N Channel
type
the barmaterial
are is
known
Drain FET an N type
deposited
as Sourceon and
either
silicon
side of Bar
the baristo
Drain
GATE formused
GATE
Source
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Fig 3. Construction of N Channel FET
EC-302.31 t0 33
9
10
Construction of FET
Source : The source is the terminal through
which majority carriers enter the Silicon
Bar
Drain : Terminal through which Majoroty
carriers leave the bar
Gate: controls Drain current and is always
reverse biased
EC-302.31 t0 32
EC-302.31 t0 33
10
11
Construction of FET
Analogy :
The operation of FET can be compared to the
water flow through a flexible pipe
When One end is pressed the cross sectional area
decreases hence water flow decreases
In a FET drain is similar to outlet
Gate is similar to control in the figure 2
EC-302.31 t0 33
11
Principle
12
when the pipe is
pressed at one end
Control (Gate) water flow decreases
Inlet ( Source)
Outlet (Drain)
EC-302.31 t0 33
13
Working
14 Space charge Channel
Region
Drain ASource
As
channel
weisincrease
isconnected
established
the to
along
Reverse
-ve the
Of bias
length
the on of
Gate
batterythe
1
GATE (Vbar
GS)The
because
Drain ischannel
of Space
width
connected to
+ charge
+vedecreases
Region
of the battery
Source
Gate is reverse Biased
+
by battery 2
EC-302.31 t0 33
14
Working
15
Drain It isAs
The Possible
Bias to adjust
wevoltage
increaseatthe the
which
bias such
Drain
Reverse thaton
current
bias Drain
becomes
Gate
GATE (Vcurrent
Zero
GS)The becomes
is Known as zero
channel width
pinch
+ off
decreases
voltage
Source
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15
Working
Gate connected to –ve (Reverse Biased) Gate connected to +ve (Reverse Biased)
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16
Working
17
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17
Working
18
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18
P Type and N type FETs
19
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19
JFET Parameters
20
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20
JFET Parameters
21
RDS= VDS/ID
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21
JFET Parameters
22
∆ VDS
rD = When VGS is constant
∆I D
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22
JFET Parameters
23
FET BJT
2. Uni polar device 1. Bipolar device
3. Voltage controlled Device
3.Current controlled device
4. High input impedance (in
Mega ohms) 4.Low input impedance
5. Better thermal stability 5.Low thermal stabilty
6. High switching speeds 6.Lower switching speeds
7. Less Noisy
7.More noisy
8. Easy to fabricate
8.Diffuicult to fabricate on IC
EC-302.31 t0 33
24
Drain Characteristics
25
Drain characteristics show the relation between the
drain to source voltage and VDS and drain current ID
B
A
VGS= 0
- VGS
VDS
EC-302.31 t0 33
25
Drain Characteristics
26
Drain characteristics show the relation between the
drain to source voltage and VDS and drain current ID
A
B At the Drain to source
In the region AB Drain
VGS= 0 Voltage corresponding
When VDS=0 , ID=0
current increases
as VDS increases as
ID also
to point toBKnee
Channel
inverse square law
increases up rate
Point A
width
This reduces
region is Known toasa
with Drain to source
- VGS minimum OHMIC value
regionand is
VDS Voltage
known as pinch off
EC-302.31 t0 33
26
Drain Characteristics
27
Drain characteristics show the relation between the
drain to source voltage and VDS and drain current ID
C
A
B Drain
Pinchcurrent
Off ID is given
Region
VGS= 0 by
Drain
This current
region remains
is Shown by BC2at
itsknown
maximumas saturation
VGSorIDSS
value
- VGS
I D = I DSS 1 −
VDS
constant current VP
region
EC-302.31 t0 33
27
Drain Characteristics
28
Drain characteristics show the relation between the
drain to source voltage and VDS and drain current ID
C
A
B Breakdown Region
VGS= 0 The device gets
damaged
This region due to
is Shown by CD
avalanche Breakdown
Drain current increases
- VGS
EC-302.31 t0 32 mechanism
Rapidly with VDS
VDS
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28
DISADVANTAGES OF FET OVER BJT
EC-302.31 t0 33
Features
The high input impedance, low output impedance and low
Applications
As a buffer amplifier which isolates the preceding stage
EC-302.31 t0 33
FET APPLICATIONS
EC-302.31 t0 33
Summary
In this session we have learnt
About Field Effect Transistors
Principle of operation
Construction and working
Symbols and types
Compare FET and BJT
Drain characteristics
Applications
Advantages,disadvantages
EC-302.31 t0 33
32
33
Quiz
Voltage controlled
FET is a device
Pinch off Voltage
The voltage at which drain current becomes Zero is
Noisy
FETs are less than BJTs
Reverse biased
Gate of a FET is always
Trans conductance
The ratio of ΔID to ΔVDS is known as
EC-302.31 t0 33
33
QUIZ
EC-302.31 t0 33
7. The field effect transistors has carriers as
(C) Electrons.
(E) Holes.
EC-302.31 t0 33
8. A unipolar transistor is a
(C) PN diode.
(I) FET.
EC-302.31 t0 33
Frequently asked questions
37
6. Classify FETs?
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37