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300 Photons
Si
Photo Signal (mV)
250
200
150
V Si0.45Ge0.55
100 0.95 eV
(100 nm)
50
1.12 eV ν
hν
0
1.2 1.25 1.3 1.35 1.4 1.45
Wavelength (microns) Si0.45Ge0.55
Si
CB
0.87 eV
0.8 eV
Holes
0.15 eV
Fermi Level
Electrons
0.4 eV 0.47 eV
VB
In1-XMnX As GaSb
CB
K Create Photo-Excited
GaSb GaSb 0.8 eV Spin- Polarized Carriers in
InAs Quantum Well.
VB
K Probe Spin-Scattering
Mechanisms: Time-Resolved
σ+ Photoluminescense in
σ— Magnetic Field.
~ 0.5 eV
K Faraday Rotation
χ (d3,B) ε (ω ~ 0 ) E(ω)E(ω)
P(2 ω) = χ ( 2 ) E(ω)E(ω)
Inversion
− P(2 ω) = χ (2 )
(−E(ω))(−E(ω))
χ (2 )
= 0 in Bulk
Experimental Setup
PMT
UG-Filter
Prism
RG-Filter
Iris
Polarizers ω 2ω ≅ 3eV
Ti:Sapphire Laser Lenses
λ = 700-920 nm,
τp = 100 fs,
Pav = 400 mW
Sample
Rotation Table
(2ω ) 2 (ω )2
(t) ∝ χ + χ E(t) I
(2) (3)
I
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Electrons
1.1 eV 4000
1.5 eV Laser Blocked
Si 2000
9 eV
EDC
0
SiO2
0 100 200 300 400 500 600
Holes Tim e (Sec)
1000
SHG Intensity (a.u.)
800
600
• Qualitative difference
400
Si (100)-SiO2 in the shape of the
200 215 mW curves in SiO2 and
0
0 200 400 600 800
ZrSiOx :
1400
1200
Þ Difference in electron
and hole injection rate?
SHG Intensity (a.u.)
1000
800
600
400
Si (100)-ZrSiOx
200
137 mW
0
0 200 400 600 800
Time(second)
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Electrons
ν
hν
In0.94Mn0.06As 12 nm
GaSb 500 nm
GaAs 300 nm
ν
hν GaAs (100)
CB ν
hν K SHG measurements can
EF probe dynamic electric field
VB due to electron-hole
GaSb migration, induced by
In1-xMnxAs photons.
Holes
Þ Understand photo-induced
Koshihara et al., PRL 78, 4617 (1997) Ferromagnetism.
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Summary
Samples
• InAs/GaMnSb, InMnAs/GaMnSb : BO
• InAs/GaSb : BO, SHG
• InMnAs/GaSb : SHG
• GaSb/InMnAs/GaSb QW : LT