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Fundamental semiconductor physics

Material Classification: Conductors, Insulators, and Semi-Conductors

This material can be classified as either a conductor, an insulator, or a semi-conductor. These


three distinct classes of material arise from a difference in the structure of the allowed electron
energy levels. In particular, every material possesses both a valence and a conduction band for
electrons, and the energy difference between these two bands will determine how easily an
electric current will pass through the material.

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As the name implies, the valence band contains the valence electrons of a substance. At absolute
zero, all of the electrons in a substance would be contained in the valence band. However, if the
substance is at a higher temperature, thermal energy can excite electrons out of the valence level
and into an excited energy level. The conduction band is composed of the excited energy states
of a substance, and it contains electrons that have been thermally or otherwise excited from the
valence band. The electrons in the conduction band are able to freely move about the substance
and conduct electricity if an external electric field is applied.

Due to the lattice spacing of the atoms and other relevant factors, there is an energy gap between
the highest- energy electron valence level and the lowest-energy conduction level. The width of
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this gap is dependent on the temperature and the pressure of the material and determines whether
a material will be a conductor, insulator or semi- conductor. For reference, an energy level
diagram for each type of material is shown in figure.

In conductors, the valence band and the conduction band overlap. Consequently, there is no
energy gap to cross in order to reach the conduction band, and any energy that is added to the
electron is sufficient to propel it into the conduction band. There are many electrons that are free

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to move about a conductor, so it very easy for current to flow if an external electric field is
applied.

In insulators, there is a distinct separation of the two bands and there is a large energy difference
between them. This energy difference is so large that the thermal energy of an individual electron
is not large enough to propel it from the valence band to the conduction band. Consequently,
there are not many electrons in the conduction band, and it is difficult for current to flow when
an external electric field is applied.

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As in insulators, there are two distinct bands in semi- conductors. However, the energy gap
between these two bands is neither as large nor as significant (typically around one electron-volt)
as is the band gap in insulators. At normal temperatures, the thermal energy of the material is
sufficient to propel some electrons from the valence band into the conduction band, allowing
some electrons to be free to conduct current. The number of free charge carriers increases with
supplied energy, so the conductivity of a semi-conductor can be manipulated by outside
potentials

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Fundamental semiconductor physics
Band structure of a semiconductor

In the parlance of solid-state physics, semiconductors (and insulators) are defined as solids in
which at absolute zero (0 K), the uppermost band of occupied electron energy states, known as
the valence band, is completely full. Or, to put it another way, the Fermi energy of the electrons
lies within the forbidden bandgap. The Fermi energy, or Fermi level can be thought of as the
energy up to which available electron states are occupied at absolute zero.

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At room temperature, there is some smearing of the energy distribution of the electrons, such that
a small, but not insignificant number have enough energy to cross the energy band gap into the
conduction band. These electrons which have enough energy to be in the conduction band have
broken free of the covalent bonds between neighbouring atoms in the solid, and are free to move
around, and hence conduct charge. The covalent bonds from which these excited electrons have
come now have missing electrons, or holes which are free to move around as well. (The holes
themselves don't actually move, but a neighbouring electron can move to fill the hole, leaving a
hole at the place it has just come from, and in this way the holes appear to move.)

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It is an important distinction between conductors and semiconductors that, in semiconductors,
movement of charge (current) is facilitated by both electrons and holes. Contrast this to a
conductor where the Fermi level lies within the conduction band, such that the band is only half
filled with electrons. In this case, only a small amount of energy is needed for the electrons to
find other unoccupied states to move into, and hence for current to flow.

The ease with which electrons in a semiconductor can be excited from the valence band to the
conduction band depends on the band gap between the bands, and it is the size of this energy
bandgap that serves as an arbitrary dividing line between semiconductors and insulators.

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Materials with a bandgap energy of less than about 3 electron volts are generally considered
semiconductors, while those with a greater bandgap energy are considered insulators..

The current-carrying electrons in the conduction band are known as "free electrons," although
they are often simply called "electrons" if context allows this usage to be clear. The holes in the
valence band behave very much like positively-charged counterparts of electrons, and they are
usually treated as if they are real charged particles.

Fundamental semiconductor physics


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Material Classification: Conductors, Insulators, and Semi-Conductors

This material can be classified as either a conductor, an insulator, or a semi-conductor. These


three distinct classes of material arise from a difference in the structure of the allowed electron
energy levels. In particular, every material possesses both a valence and a conduction band for
electrons, and the energy difference between these two bands will determine how easily an
electric current will pass through the material.

As the name implies, the valence band contains the valence electrons of a substance. At absolute
zero, all of the electrons in a substance would be contained in the valence band. However, if the
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substance is at a higher temperature, thermal energy can excite electrons out of the valence level
and into an excited energy level. The conduction band is composed of the excited energy states
of a substance, and it contains electrons that have been thermally or otherwise excited from the
valence band. The electrons in the conduction band are able to freely move about the substance
and conduct electricity if an external electric field is applied.

Due to the lattice spacing of the atoms and other relevant factors, there is an energy gap between
the highest- energy electron valence level and the lowest-energy conduction level. The width of
this gap is dependent on the temperature and the pressure of the material and determines whether

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a material will be a conductor, insulator or semi- conductor. For reference, an energy level
diagram for each type of material is shown in figure.

In conductors, the valence band and the conduction band overlap. Consequently, there is no
energy gap to cross in order to reach the conduction band, and any energy that is added to the
electron is sufficient to propel it into the conduction band. There are many electrons that are free
to move about a conductor, so it very easy for current to flow if an external electric field is
applied.
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In insulators, there is a distinct separation of the two bands and there is a large energy difference
between them. This energy difference is so large that the thermal energy of an individual electron
is not large enough to propel it from the valence band to the conduction band. Consequently,
there are not many electrons in the conduction band, and it is difficult for current to flow when
an external electric field is applied.

As in insulators, there are two distinct bands in semi- conductors. However, the energy gap
between these two bands is neither as large nor as significant (typically around one electron-volt)
as is the band gap in insulators. At normal temperatures, the thermal energy of the material is
sufficient to propel some electrons from the valence band into the conduction band, allowing
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some electrons to be free to conduct current. The number of free charge carriers increases with
supplied energy, so the conductivity of a semi-conductor can be manipulated by outside
potentials

Fundamental semiconductor physics


Energy Bands

Sometimes valence electrons are shared, becoming a bond between two atoms - covalent
bonding. This is the bonding type in diamond-crystal lattice semiconductors such as silicon
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semiconductors. However, it is more interesting to analyze energy-related aspects rather than
spatial aspects such as bonds. Therefore the concept of energy bands is coming in handy.

An almost continuous band of allowed energies of electrons comes about when atoms are
brought in close proximity to each other, this is because of the interatomic forces and is foreseen
in the Pauli exclusion principle. “Almost”, well, one energy level is split into N levels when N
atoms are brought together, and these N levels can accommodate at most 2N electrons due to
spin degeneracy.

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Remember, N is huge! Now, since the separation between the energy levels within the band is
much smaller than the thermal energy possessed by an electron at room temperature the band can
be viewed as continuous. Ec is the lowest possible conduction band energy, while Ev is the
highest possible valence band energy. The band gap energy, Eg, is furthermore defined as (Ec -
Ev). Eg is the energy it takes to break a bond in the spatial view of the crystal. The band gap
energies for some semiconductors at T = 300 K are: Eg = 1.42 eV in GaAs and 1.12 eV in Si.
You do remember that 1 eV = 1.602?10-19 J, don’t you?

Fundamental semiconductor physics


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Current Flow and the Concept of Holes
Using the concept of energy bands, the pure semiconductor (ideally, i.e. T 0 K) contains a
completely filled (with electrons) valence band and a completely empty conduction band.
Completely filled bands do contain plenty of electrons but do not contribute to the conductivity
of the material. This is due to the fact that the electrons can not gain energy since all energy
levels are already filled. As semiconductors are of primary interest in this text, we now introduce
a simplified energy band diagram for semiconductors and define some key parameters. The
diagram is shown in the figure below:

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A simplified energy band diagram used to describe semiconductors. Shown are the valence and
conduction band as indicated by the valence band edge Ev and the conduction band edge Ec. The
vacuum level, EVACUUM and the electron affinity, c are also indicated on the figure.

The diagram identifies the almost-empty conduction band simply by a line which indicates the
bottom of the conduction band and is labeled Ec. Similarly the top of the valence band is
indicated with a line labeled Ev. Note: The actual bandstructures of semiconductors is more
complex than the reader is lead to believe by the discussion above. So, semiconductors
distinguish themselves from metals and insulators by the fact that they contain an "almost-

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empty" conduction band and an "almost-full" valence band. This also means that we will have to
deal with the transport of carriers in both bands.

To facilitate the discussion of the transport in the "almost-full" valence band we will introduce
the concept of holes in a semiconductor. It is important for the reader to understand that one
could deal with only electrons (since these are the only real particles available in a
semiconductor) if one is willing to keep track of all the electrons in the "almost-full" valence
band.

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The concepts of holes is introduced based on the notion that it is a whole lot easier to keep track
of the missing particles in an "almost-full" band, rather than keeping track of the actual electrons
in that band. We will now first explain the concept of a hole and then point out how the hole
concept simplifies the analysis.

Holes are missing electrons. They behave as particles with the same properties as the electrons
would have occupying the same states except that they carry a positive charge. This definition is
illustrated further with the figure below which presents the simplified energy band diagram in the
presence of an electric field.

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Fundamental semiconductor physics
Purity and perfection of semiconductor materials

Semiconductors with predictable, reliable electronic properties are difficult to


mass-produce because of the required chemical purity, and the perfection of
the crystal structure, which are needed to make devices. Because the
presence of impurities in very small proportions can have such big effects on
the properties of the material, the level of chemical purity needed is
extremely high. Techniques for achieving such high purity include zone
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refining, in which part of a solid crystal is melted. Impurities tend to
concentrate in the melted region, leaving the solid material more pure. A
high degree of crystalline perfection is also required, since faults in crystal
structure such as dislocations, twins, and stacking faults, create energy
levels in the band gap, interfering with the electronic properties of the
material. Faults like these are a major cause of defective devices in
production processes. The larger the crystal, the harder it is to achieve the
necessary purity and perfection; current mass production processes use six-
inch diameter crystals which are grown as cylinders and sliced into wafers.

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Fundamental semiconductor physics
The chip

A transistor is essentially a replacement for a vacuum tube. When tiny transistors replaced bulky
vacuum tubes, the first applications resulted in electronic devices that accomplished the same as
tube-based devices, but were much smaller. This encouraged engineers to build more functions
into the same devices since there was now more room. By the end of the 1950s, electronics
manufacturers were faced with circuits of increasing complexity. Computers, for example,

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contained tens of thousands of transistors. Assembly often required hundreds of thousands of
interconnections, all of which had to be soldered by hand.

Electronic devices, such as computers and radios, use several different types of components.
Some are very fast switches. Others act as electronic gates, allowing certain messages to get
through while rejecting others, or restricting flow of current to a single direction. In a computer
such gates become logic circuits that, for example, combine two statements into one using the
electronic equivalents to the logical connectives and, or, or if-then. Another component amplifies
a signal. After the invention of the transistor, various configurations of transistors were created to
perform these functions, components still referred to by such traditional names as resistor,
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capacitor, diode, and so forth. In each case the method was to add specific impurities to different
regions of a semiconductor chip, a process called doping.

The idea of placing several components on a single chip came separately to two people who
worked independently.

Jack Kilby, an electronics engineer, in 1958 joined a team at Texas Instruments that studied ways
to reduce the size of computer circuits. Kilby created a semiconductor chip that carried an
oscillator made of several components, such as switches, resistors, capacitors, and diodes, all
made from doped semiconductors. Although these components were on a single chip, Kilby had
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not developed a suitable way to connect them, and had to create interconnections in the
traditional way. He demonstrated his oscillator-on-a-chip to executives from Texas Instruments
on September 12, 1958, and filed for a patent a few months later.

Robert Noyce, a physicist, was the head of research at the recently founded Fairchild
Semiconductor. That company had developed the "planar" technology for the manufacture of
transistors. In that method, large numbers of transistors were created on a single wafer, which
subsequently was cut up to yield the single transistors. Noyce realized that this technology would
be suitable for creating an entire circuit on such a wafer. But he also found a way to make

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connections between the components on the wafer by laying down conducting tracks. The result
is termed an integrated circuit, but most people simply call it a chip.

Noyce filed a patent for his integrated circuit one year after Kilby did, and was granted it in April
1961. Kilby's patent application was rejected because he had not solved the problem of
interconnecting the components on the chip.

A legal battle between Kilby and Noyce ensued, which ultimately was won by Noyce by decision
of the Court of Customs and Patents Appeals in November 1969. Fairchild Semiconductor and
Texas Instruments, however, had already agreed to share the licensing of integrated circuits in
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1966. Noyce and Kilby, regarded by the technical community as coinventors, a view both have
accepted, jointly received the National Medal of Science for their invention.

Fundamental semiconductor physics


Doping of semiconductors
One of the main reasons that semiconductors are useful in electronics is that their electronic
properties can be greatly altered in a controllable way by adding small amounts of impurities.
These impurities are called dopants.

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Heavily doping a semiconductor can increase its conductivity by a factor greater than a billion.
In modern integrated circuits, for instance, heavily-doped polycrystalline silicon is often used as
a replacement for metals.

Intrinsic and extrinsic semiconductors

An intrinsic semiconductor is one which is pure enough that impurities do not appreciably affect
its electrical behavior. In this case, all carriers are created by thermally or optically excited
electrons from the full valence band into the empty conduction band. Thus equal numbers of
electrons and holes are present in an intrinsic semiconductor. Electrons and holes flow in
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opposite directions in an electric field, though they contribute to current in the same direction
since they are oppositely charged. Hole current and electron current are not necessarily equal in
an intrinsic semiconductor, however, because electrons and holes have different effective masses
(crystalline analogues to free inertial masses).

The concentration of carriers is strongly dependent on the temperature. At low temperatures, the
valence band is completely full, making the material an insulator (see electrical conduction for
more information). Increasing the temperature leads to an increase in the number of carriers and
a corresponding increase in conductivity. This principle is used in thermistors. This behavior

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contrasts sharply with that of most metals, which tend to become less conductive at higher
temperatures due to increased phonon scattering.

An extrinsic semiconductor is one that has been doped with impurities to modify the number and
type of free charge carriers.

N-type doping

The purpose of n-type doping is to produce an abundance of mobile or "carrier" electrons in the
material. To help understand how n-type doping is accomplished, consider the case of silicon
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(Si). Si atoms have four valence electrons, each of which is covalently bonded with one of four
adjacent Si atoms. If an atom with five valence electrons, such as those from group VA of the
periodic table (eg. phosphorus (P), arsenic (As), or antimony (Sb)), is incorporated into the
crystal lattice in place of a Si atom, then that atom will have four covalent bonds and one
unbonded electron. This extra electron is only weakly bound to the atom and can easily be
excited into the conduction band. At normal temperatures, virtually all such electrons are excited
into the conduction band. Since excitation of these electrons does not result in the formation of a
hole, the number of electrons in such a material far exceeds the number of holes. In this case the
electrons are the majority carriers and the holes are the minority carriers. Because the five-
electron atoms have an extra electron to "donate", they are called donor atoms. Note that each
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movable electron within the semiconductor is never far from an immobile positive dopant ion,
and the n-doped material normally has a net electric charge of zero.

Fundamental semiconductor physics


Doping of semiconductors (page 2)

P-type doping

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The purpose of p-type doping is to create an abundance of holes. In the case of silicon, a trivalent
atom (such as boron) is substituted into the crystal lattice. The result is that one electron is
missing from one of the four covalent bonds normal for the silicon lattice. Thus the dopant atom
can accept an electron from a neighboring atoms' covalent bond to complete the fourth bond.
Such dopants are called acceptors. The dopant atom accepts an electron, causing the loss of one
bond from the neighboring atom and resulting in the formation of a "hole." Each hole is
associated with a nearby negative-charged dopant ion, and the semiconductor remains
electrically neutral as a whole. However, once each hole has wandered away into the lattice, one
proton in the atom at the hole's location will be "exposed" and no longer cancelled by an
electron. For this reason a hole behaves as a quantity of positive charge. When a sufficiently
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large number of acceptor atoms are added, the holes greatly outnumber the thermally-excited
electrons. Thus, the holes are the majority carriers, while electrons are the minority carriers in p-
type materials. Blue diamonds (Type IIb), which contain boron (B) impurities, are an example of
a naturally occurring p-type semiconductor.

P-n junctions

A p-n junction may be created by doping adjacent regions of a semiconductor with p-type and n-
type dopants. If a positive bias voltage is placed on the p-type side, the dominant positive carriers
(holes) are pushed toward the junction. At the same time, the dominant negative carriers
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(electrons) in the n-type material are attracted toward the junction. Since there is an abundance of
carriers at the junction, the junction behaves as a conductor, and the voltage placed across the
junction produces a current. As the clouds of holes and electrons are forced to overlap, electrons
fall into holes and become part of the population of immobile covalent bonds. However, if the
bias polarity is reversed, the holes and electrons are pulled away from the junction. Since only
very few new electron/hole pairs are created at the junction, the existing mobile carriers are
swept away to leave a Depletion Zone; a region of relatively non-conducting silicon. The
reversed bias voltage will produce only a very low current across the junction. The p-n junction
is the basis of an electronic device called a diode, which allows electric charges to flow in only
one direction. Similarly, a third semiconductor region can be doped n-type or p-type to form a
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three-terminal device, such as the bipolar junction transistor (which can be either p-n-p or n-p-n).

For dad

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Search

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p.1

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Catalogue voltage
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Catalogue voltage
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Catalogue voltage
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Catalogue voltage
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