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MOCK GATE-I (ECE)

MOCK GATE-I (ECE)

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This is meant for GATE aspirants in India from Electronics Engineering Department. This paper is conducted by Institute of Engineering Studies (popularly known as IES,Bangalore) in its class room coaching.
All the best to all GATE aspirants...
Highlights:
We produced Max., IES officers among others in Bangalore,
Always Max., selections for all PSUs are from IES,Bangalore only,
Produced so far top notch ranks like 1,4,.... etc., in GATE,
Complete Study materials, Question Banks, Max., No. of class room sessions, weekly tests, separate problem solving sessions, motivation classes by seniors etc.,
This is meant for GATE aspirants in India from Electronics Engineering Department. This paper is conducted by Institute of Engineering Studies (popularly known as IES,Bangalore) in its class room coaching.
All the best to all GATE aspirants...
Highlights:
We produced Max., IES officers among others in Bangalore,
Always Max., selections for all PSUs are from IES,Bangalore only,
Produced so far top notch ranks like 1,4,.... etc., in GATE,
Complete Study materials, Question Banks, Max., No. of class room sessions, weekly tests, separate problem solving sessions, motivation classes by seniors etc.,

More info:

Published by: Institute of Engineering Studies (IES) on Feb 09, 2012
Copyright:Attribution Non-commercial

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10/31/2014

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Institute Of Engineering Studies Mock Test- I
1
No.1 Training center for
GATE/IES/JTO/PSUs
in Bangalore
@ Malleshwaram & Jayanagar
, Bangalore: Ph: 0 99003 99699/ 0 97419 00225 / 080-32552008Email :Onlineies.com@gmail.comSite:www.onlineIES.com  Google+:http://bit.ly/gplus_iesgateFB:www.facebook.com/onlineies 
ELECTRONICS & COMMUNICATION
Max Marks = 100Q.Nos 1 to 25 will carry one mark each Total Duration = 3 hours
1.What is the time function v
x
(t) for the circuit shown in figure if ω = 100 rad/s
 
 j 60 _ +
 
 _ 50+0.4 VV j 12
xx
 _  _  j 25=A
s
I
 a. v
x
(t) = 100 cos(100t
 –
36.87
0
) V b. v
x
(t) = 250 cos(100t
 –
36.87
0
) V c. v
x
(t) = 100 sin(100t
 –
36.87
0
) Vd. v
x
(t) = 150 sin(100t
 –
36.87
0
) V2.Consider the circuit of figure , suppose v
s
(t) = 30 u(t) V,
 
Z
s
 
= 1Ω, Z
L
 
= 20 Ω, and the z
-parameter matrix isThen Z
in
and Z
out
are
VZV _ I
1
Z+V _ IZ
Z
in
Two-Port _ +
                   ↑
oooo2s
+
L
                   ↑
sout21
 
a.4 Ω, 34 Ω
 
b. 5 Ω, 30 Ω
 
c. 5.75 Ω, 34 Ω
 
d. 5.75 Ω, 24 Ω
 3.Consider the graph and tree of a network , shown in the figure , the number of twigs and links of the network arerespectively,
423561
 
236
 a.
 
1,3 b. 5,1 c. 2,1 d. 4,2Q4. Match List-I with List-II select the correct answer using the codes given below the lists:List-I List-IIa. Drift current charge 1. Law of conservation
b. Einstein’s equation
2. Electric fieldc. Diffusion current 3. Thermal voltaged. Continuity equation 4. Concentration gradientCodes:A B C Da. 2 1 4 3
 
Institute Of Engineering Studies Mock Test- I
2
No.1 Training center for
GATE/IES/JTO/PSUs
in Bangalore
@ Malleshwaram & Jayanagar
, Bangalore: Ph: 0 99003 99699/ 0 97419 00225 / 080-32552008Email :Onlineies.com@gmail.comSite:www.onlineIES.com  Google+:http://bit.ly/gplus_iesgateFB:www.facebook.com/onlineies  b. 4 3 2 1c. 4 1 2 3d. 2 3 4 1Q5. A particular Red LED emits light of wavelength 7600 A
0
. The energy band gap of the semiconductor material
used there is (Planck’s constant = 6.626 x 10
-34
J-S)a. 2.26 e V b. 1.17 eVc. 1.63 eV d. 0.74 e VQ6. In the case of the circuit shown in the figure the collector current I
c
will be
3k20 k+ 12 V2 k
 
12 k= 100V
BE
A= 0.7 VIco= 0.0120
o
Cat
 a. 2.26 mA b. 1.85 mAc. 0.375 mA d. 0.185 mAQ7. A resistance thermometer has a temperature coefficient of resistance 10
-3
per degree and its resistance at 0
0
 
C is 1.0 Ω.
At what
temperature is its resistance 1.1 Ω?
 a. 10
0
C b. 100
0
Cc. 120
0
C d.
 –
10
0
CQ8. The logic realized by the circuit shown in figure is
IIII
23
FSS
014 to1 MUX01
 _ CC
AB
 a. b.c. d.Q9. In a J-K flip-flip we have J = and K=1. (See Fig.) Assuming the flip flop was initially cleared and then clockedfor 6 pulses, the sequence at the Q output will be
QJ _ KQQCK
1
 
 
Institute Of Engineering Studies Mock Test- I
3
No.1 Training center for
GATE/IES/JTO/PSUs
in Bangalore
@ Malleshwaram & Jayanagar
, Bangalore: Ph: 0 99003 99699/ 0 97419 00225 / 080-32552008Email :Onlineies.com@gmail.comSite:www.onlineIES.com  Google+:http://bit.ly/gplus_iesgateFB:www.facebook.com/onlineies  a. 010000 b. 011001c. 010010 d. 01010110.For the circuit shown, V
CE
and V
BE
 
are related by , (assume β to be very high )
6 V
CE
2k2k2k2kV
 a. V
CE
= V
BE
b. V
CE
= 2 V
BE
c. V
CE
= ½ V
BE
d. V
CE
= 0
11.For the op-
amp, BJT circuit shown assume β =4 for BJT , and op
 
-amp to be ideal. Which is the correctstatement ,assume BJT be in active region and power supply will be ± 10 V
A
3 K
BVo6 V3 V
1 K
 a. terminal A is inverting and V
0
= 1V b. terminal A is non-inverting and V
0
= 1V c. terminal A isinverting and V
0
= 1.25V d. terminal A is non-inverting and V
0
= 1.25V12.If mid-band gains from V
i
to V
0
under the condition when switch S is open and closed are A
1
and A
2
 respectively , then A
1
 / A
2
is given by, neglect h
ie
of the BJT
DDBB
RVR
iE
V
BCo
~
SRCVV
 

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