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Response to criticism vis-a-vis memristor vs. scientific method

Response to criticism vis-a-vis memristor vs. scientific method

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Published by Blaise_Mouttet

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Published by: Blaise_Mouttet on Feb 23, 2012
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February 20, 2012
Response to “Pinched Hysteresis Loops is theFingerprint of Memristive Devices”
Blaise Mouttet
— This is a short response to a recent paperby Kim et al. [1] which correctly notes that the zero-crossing pinched hysteresis loop of a memristor ormemristive system must hold for all amplitudes, forall frequencies, and for all initial conditions, of anyperiodic testing waveform, such as sinusoidal ortriangular signals, which assumes both positive andnegative values over each period of the waveform. Anexample is noted from the literature indicating thatTiO
memory resistors might not be consideredeither memristors or memristive systems given thisconstraint.
 Keywords- non-linear dynamic systems, memresistor, RRAM, ReRAM 
1) Initially, it is noted that the paper by Kim et al.[1] appears to be missing the basic point of my paper[2]. My point was that there are non-memristivedynamic systems that also demonstrate pinchedhysteresis under some conditions. Arguing that myexamples do not fall into the category of memristivesystems actually supports my position rather thancontradicting it. Zero-crossing pinched hysteresis isa property of memristors but it is also a property of other dynamic systems which are neither memristorsnor memristive systems which my paper proves.2) Secondly, it is noted that I provided 15 examplesin my paper. I agree that Kim et al. makes a goodpoint that for my first three examples the zero-crossing pinched hysteresis effect does not holdunder variation in amplitude, initial conditions, andfrequencies. However, Kim et al. has ignored severalof my more generalized examples which do exhibitamplitude and initial condition invariance of thezero-crossing pinched hysteresis effect. Seeexamples 7-9 and 14 of [2].3) Thirdly, there is experimental evidence that forreal materials the zero-crossing pinched hysteresiseffect does not hold under variation in amplitude,initial conditions, or frequencies. For example, thereader is referred to Fig. 1a of Argall’s 1968 paperon the memory resistance effects of thin film TiO
 [3]. Fig. 1a of Argall illustrates that under someconditions (probably during electroformationprocesses) the zero-crossing pinched hysteresis doesnot occur. Thus the physics of TiO
memoryresistors may not be concordant with the formaldefinition of memristors or memristive systems. Anypaper claiming to have found an example of aphysical memristor or memristive system needs toshow experimental results for different amplitudesand frequencies and compare them with what wouldbe expected from a memristor or memristivesystems model. Otherwise the term “memristor”should not be considered a scientific term but rathera term related to propaganda.4) Fourthly, it is noted that Hyongsuk Kim (the firstlisted author of [1]) is a co-inventor (along withLeon Chua) in a pending US Patent Application [4]claiming a method of implementing memristormemory. Therefore Kim may have a financialinterest in trying to discredit anyone who questionswhether all forms of resistance memory (ReRAM,phase change memory, MRAM) are memristors.5) In conclusion, it is noted that Kim et al. does notadequately address the main point of my paper.There is currently no strong scientific evidence thateither the memristor or the memristive systemsmodel of Chua is the correct model for TiO
 memory resistors or any other type of memoryresistor. I have shown in [2] that it is possible togenerate zero-crossing pinched hysteresis curvesusing other dynamic systems models. It is very

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