Chapter 1

Exercise Problems
EX1.1
Eg
ni = BT 3 / 2 exp

2kT

GaAs: ni = ( 2.1 1014 ) ( 300 )

Ge: ni = (1.66 1013 ) ( 300 )

3/ 2

3/ 2

1.4
or ni = 1.8 106 cm 3
exp
2 ( 86 106 ) ( 300 )

0.66
or ni = 2.40 1013 cm 3
exp
2 ( 86 106 ) ( 300 )

EX1.2
(a) majority carrier: holes, po = 1017 cm 3 minority carrier: electrons,
n 2 (1.5 10
no = i =
1017
po

10 2

= 2.25 103 cm 3

(b) majority carrier: electrons, no = 5 1015 cm 3 minority carrier: holes,

n 2 (1.5 10 )
= 4.5 104 cm 3
po = i =
5 1015
no
10 2

EX1.3
For n-type, drift current density J en nE or 200 = (1.6 1019 ) ( 7000 ) (1016 ) E which yields
E = 17.9 V / cm

EX1.4
Diffusion current density due to holes:
dp
J p = eD p
dx
1
x
= eD p (1016 ) exp
L
L
p
p
(a) At x = 0

(1.6 10 ) (10 ) (10 ) = 16 A / cm

=
19

Jp

16

103
3
(b) At x = 10 cm

103
J p = 16 exp 3 = 5.89 A / cm 2
10

EX1.5
N N
Vbi = VT ln a 2 d
ni

(1016 )(1017 )

or Vbi = 1.23 V
=
0.026
ln
(
)

6 2

(1.8 10 )

EX1.6

V
C j = C jo 1 + R
Vbi
and

1/ 2

N N
Vbi = VT ln a 2 d
ni
(1017 )(1016 )
= 0.757 V
= ( 0.026 ) ln
(1.5 1010 )2

Then 0.8 = C jo 1 +

0.757
or
C jo = 2.21 pF

1/ 2

= C jo ( 7.61)

1/ 2

EX1.7

v
iD = I S exp D 1
VT

v
so 103 = (1013 ) exp D 1
0.026

103

Solving for the diode voltage, we find vD = ( 0.026 ) ln 13 + 1

10

or
vD ( 0.026 ) ln (1010 )

which yields
vD = 0.599 V
EX1.8
V
VPS = I D R + VD and I D I S exp D
VT
( 4 VD )
so 4 = I D ( 4 103 ) + VD I D =
4 103
and
V
I D = (10 12 ) exp D
0.026
By trial and error, we find I D 0.864 mA and VD 0.535 V

EX1.9

(a)

ID =

(b)

ID =

Then R =
(c)

VPS V
R
VPS V
R

5 0.7
I D = 1.08 mA
4
VPS V
R=
ID
=

8 0.7
= 6.79 k
1.075

ID(mA)
Diode curve
1.25
1.08

Load lines
(b)
(a)

0.7

4
VD(v)

EX1.10
PSpice analysis
EX1.11

Quiescent diode current I DQ =

VPS V

10 0.7
= 0.465 mA
20

R
Time-varying diode current:
V
0.026
We find that rd = T =
= 0.0559 k
I DQ 0.465
Then id =

vI
0.2sin t (V )
=

or id = 9.97sin t ( A)
rd + R 0.0559 + 20 ( k )

EX1.12
I
1.2 103
or VD = 0.6871 V
For the pn junction diode, VD VT ln D = ( 0.026 ) ln
15
4 10
IS
The Schottky diode voltage will be smaller, so VD = 0.6871 0.265 = 0.4221 V
V
Now I D I S exp D
VT
or
1.2 103
IS =
I S = 1.07 1010 A
0.4221

exp

0.026

EX1.13
P = I VZ 10 = I ( 5.6 ) I = 1.79 mA

Also I =

10 5.6
= 1.79 R = 2.46 k
R

Test Your Understanding Exercises

TYU1.1
(a) T = 400K
Eg
Si: ni = BT 3 / 2 exp

2kT
ni = ( 5.23 1015 ) ( 400 )

or
ni = 4.76 1012 cm 3

3/ 2

1.1

exp
6
2 ( 86 10 ) ( 400 )

Ge: ni = (1.66 1015 ) ( 400 )

3/ 2

0.66

exp
6
2 ( 86 10 ) ( 400 )

or
ni = 9.06 1014 cm 3
GaAs:
ni = ( 2.1 1014 ) ( 400 )

3/ 2

1.4

exp
6
2 ( 86 10 ) ( 400 )

or
ni = 2.44 109 cm 3
(b) T = 250 K
Si: ni = ( 5.23 1015 ) ( 250 )

3/ 2

1.1

exp
2 ( 86 106 ) ( 250 )

or
ni = 1.61 108 cm 3
Ge: ni = (1.66 1015 ) ( 250 )

3/ 2

0.66

exp
6
2 ( 86 10 ) ( 250 )

or
ni = 1.42 1012 cm 3
GaAs: ni = ( 2.10 1014 ) ( 250 )

3/ 2

1.4

exp
2 ( 86 106 ) ( 250 )

or
ni = 6.02 103 cm 3
TYU1.2
(a)
n = 5 1016 cm 3 , p <<< n, so e n n = (1.6 10 19 ) (1350 ) ( 5 1016 )

or

= 10.8 ( cm )
(b)

p = 5 1016 cm 3 , n <<< p, so e p p = (1.6 1019 ) ( 480 ) ( 5 1016 )

or

= 3.84 ( cm )

TYU1.3
J = E = (10 )(15 ) or J = 150 A / cm2
TYU1.4

(a)

J n = eDn

1015 1016
dn
n
so J n = 1.6 1019 ( 35 )
= eDn
4
dx
x
0 2.5 10

or
J n = 202 A / cm 2
(b)

J p = eD p

or
J p = 24.5 A / cm2
TYU1.5

1014 5 1015
dp
p
so J p = 1.6 1019 (12.5 )
= eD p
4
dx
x
0 4 10

no = N d = 8 1015 cm 3

(a)

10
n 2 (1.5 10 )
po = i =
= 2.81 10 4 cm 3
no
8 1015
2

(b) n = no + n = 8 1015 + 0.1 1015

or
n = 8.11015 cm3
p = po + p = 2.81 10 4 + 1014
or
p 1014 cm 3
TYU1.6

(a)

(1015 )(1017 )
N N
= 0.697 V
Vbi = VT ln a 2 d so Vbi = ( 0.026 ) ln
(1.5 1010 )2
ni

(b)

(1017 )(1017 )
= 0.817 V
Vbi = ( 0.026 ) ln
(1.5 1010 )2

TYU1.7

V
I D = I S exp D
VT

(a)

0.5
I D 1014 exp

0.026
Then, for
VD = 0.5 V, I D = 2.25 A
VD = 0.6 V, I D = 0.105 mA
VD = 0.7 V, I D = 4.93 mA
(b)
I D I S = 10 14 A
for both cases.
TYU1.8
T = 100C so VD 2 100 = 200 mV
Then VD = 0.650 0.20 = 0.450 V
TYU1.9
ID(mA)
Diode
1.0
0.87

Load line

1
0.54v

2
VD(v)

VD

ID

0.45
0.50
0.55

0.033
0.225
1.54

TYU1.10
P = I DVD 1.05 = I D ( 0.7 ) so I D = 1.5 mA

Now R =

VPS V
ID

10 0.7
R = 6.2 k
1.5

TYU1.11
I
0.8
gd = D =
= 30.8 mS
VT 0.026
TYU1.12
V
0.026
0.026
rd = T 50 =
ID =
ID
ID
50
or
I D = 0.52 mA
TYU1.13
For the pn junction diode,
4 0.7
ID =
= 0.825 mA
4

For the Schottky diode, I D =

4 0.3
= 0.925 mA
4

TYU1.14
Vz = Vzo + I z rz Vzo = Vz I z rz so Vzo = 5.20 (10 3 ) ( 20 ) = 5.18 V

Then Vz = 5.18 + (10 103 ) ( 20 ) Vz = 5.38 V